Physics and behavior of asymmetrically recessed InP-based MODFET's fabricated with an electron beam resist process

Daniel G. Ballegeer, Ilesanmi Adesida, Catherine Caneau, Raj Bhat

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The effects of asymmetric recess on device performance was investigated by fabricating MODFET's on OMVPE-grown InAlAs/InGaAs structures both with and without the use of electron beam resist process. The DC and high frequency characteristics of these devices are reported as function of the extent of gate recess toward the drain. The small signal equivalent circuit model element values extracted from high frequency S-parameter measurement are presented.

Original languageEnglish
Pages (from-to)331-334
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1994
Externally publishedYes

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recesses
Metallorganic vapor phase epitaxy
Scattering parameters
High electron mobility transistors
Equivalent circuits
Electron beams
Physics
electron beams
physics
equivalent circuits
direct current

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

@article{c4d8fe9afe7543408de7c004a0968539,
title = "Physics and behavior of asymmetrically recessed InP-based MODFET's fabricated with an electron beam resist process",
abstract = "The effects of asymmetric recess on device performance was investigated by fabricating MODFET's on OMVPE-grown InAlAs/InGaAs structures both with and without the use of electron beam resist process. The DC and high frequency characteristics of these devices are reported as function of the extent of gate recess toward the drain. The small signal equivalent circuit model element values extracted from high frequency S-parameter measurement are presented.",
author = "Ballegeer, {Daniel G.} and Ilesanmi Adesida and Catherine Caneau and Raj Bhat",
year = "1994",
language = "English",
pages = "331--334",
journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
issn = "1092-8669",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Physics and behavior of asymmetrically recessed InP-based MODFET's fabricated with an electron beam resist process

AU - Ballegeer, Daniel G.

AU - Adesida, Ilesanmi

AU - Caneau, Catherine

AU - Bhat, Raj

PY - 1994

Y1 - 1994

N2 - The effects of asymmetric recess on device performance was investigated by fabricating MODFET's on OMVPE-grown InAlAs/InGaAs structures both with and without the use of electron beam resist process. The DC and high frequency characteristics of these devices are reported as function of the extent of gate recess toward the drain. The small signal equivalent circuit model element values extracted from high frequency S-parameter measurement are presented.

AB - The effects of asymmetric recess on device performance was investigated by fabricating MODFET's on OMVPE-grown InAlAs/InGaAs structures both with and without the use of electron beam resist process. The DC and high frequency characteristics of these devices are reported as function of the extent of gate recess toward the drain. The small signal equivalent circuit model element values extracted from high frequency S-parameter measurement are presented.

UR - http://www.scopus.com/inward/record.url?scp=0028288837&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028288837&partnerID=8YFLogxK

M3 - Article

SP - 331

EP - 334

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

ER -