Physics and behavior of asymmetrically recessed InP-based MODFET's fabricated with an electron beam resist process

Daniel G. Ballegeer, Ilesanmi Adesida, Catherine Caneau, Raj Bhat

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

The effects of asymmetric recess on device performance was investigated by fabricating MODFET's on OMVPE-grown InAlAs/InGaAs structures both with and without the use of electron beam resist process. The DC and high frequency characteristics of these devices are reported as function of the extent of gate recess toward the drain. The small signal equivalent circuit model element values extracted from high frequency S-parameter measurement are presented.

Original languageEnglish
Pages (from-to)331-334
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - Jan 1 1994
Externally publishedYes
EventProceedings of the 6th International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA
Duration: Mar 27 1994Mar 31 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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