Piezoelectric coefficient of aluminum nitride and gallium nitride

C. M. Lueng, H. L.W. Chan, C. Surya, C. L. Choy

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101 Citations (Scopus)

Abstract

The piezoelectric coefficient d33 of aluminum nitride (AlN) and gallium nitride (GaN) thin films grown on silicon substrates by molecular beam epitaxy have been measured using a laser interferometer. X-ray diffraction reveals that the AlN and GaN films consist mainly of crystals with a hexagonal wurtzite structure. In order to grow epitaxial GaN films, an AlN film was first deposited on silicon as the buffer layer, so the d33 measurement for GaN was actually performed on GaN/AlN/Si multilayer systems. The relative permittivity and electrical resistivity of each constituent layer of the film and the potential drop across each layer were determined as a function of frequency. The potential drops were then used to calculate the piezoelectric coefficient d33 of GaN. After correcting for substrate clamping, d33 of AlN and GaN were found to be (5.1±0.1) and (3.1±0.1) pm V-1, respectively.

Original languageEnglish
Pages (from-to)5360-5363
Number of pages4
JournalJournal of Applied Physics
Volume88
Issue number9
DOIs
Publication statusPublished - Nov 1 2000
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Lueng, C. M., Chan, H. L. W., Surya, C., & Choy, C. L. (2000). Piezoelectric coefficient of aluminum nitride and gallium nitride. Journal of Applied Physics, 88(9), 5360-5363. https://doi.org/10.1063/1.1317244