Piezoelectric coefficient of GaN measured by laser interferometry

C. M. Lueng, H. L.W. Chan, C. Surya, W. K. Fong, C. L. Choy, P. Chow, M. Rosamond

Research output: Contribution to journalConference article

26 Citations (Scopus)

Abstract

A Mach-Zehnder type heterodyne interferometer was used to measure the d33 coefficient of wurtzite gallium nitride (GaN) films. The 140 nm thick GaN film, with a 30 nm thick aluminum nitride (AlN) buffer layer, had been grown by molecular beam epitaxy (MBE) on (1 0 0) or (1 1 1) silicon substrates. The measurement of the piezoelectric coefficient was made with a spatial resolution (laser beam diameter) of 100 μm. Voltage drop across the aluminum nitride buffer layer was estimated and used in calculating the piezoelectric coefficient of GaN. For rigidly mounted samples, the measured d33 was 2.13 pm/V.

Original languageEnglish
Pages (from-to)123-127
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume254
Issue number1-3
DOIs
Publication statusPublished - Jan 1 1999
Externally publishedYes
EventProceedings of the 1998 2nd International Conference on Amorphous and Crystalline Insulating Thin Films II - Hong Kong, China
Duration: Oct 12 1998Oct 14 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Piezoelectric coefficient of GaN measured by laser interferometry'. Together they form a unique fingerprint.

  • Cite this

    Lueng, C. M., Chan, H. L. W., Surya, C., Fong, W. K., Choy, C. L., Chow, P., & Rosamond, M. (1999). Piezoelectric coefficient of GaN measured by laser interferometry. Journal of Non-Crystalline Solids, 254(1-3), 123-127. https://doi.org/10.1016/S0022-3093(99)00383-X