Piezoelectric coefficients of aluminum nitride and gallium nitride

C. M. Lueng, H. L.W. Chan, W. K. Fong, C. Surya, C. L. Choy

Research output: Contribution to journalConference article

Abstract

Aluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Original languageEnglish
Pages (from-to)389-394
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume572
Publication statusPublished - Dec 1 1999
Externally publishedYes
EventProceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA
Duration: Apr 5 1999Apr 8 1999

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lueng, C. M., Chan, H. L. W., Fong, W. K., Surya, C., & Choy, C. L. (1999). Piezoelectric coefficients of aluminum nitride and gallium nitride. Materials Research Society Symposium - Proceedings, 572, 389-394.