Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition

Z. Q. Fang, D. C. Look, X. L. Wang, Jung Han, F. A. Khan, I. Adesida

Research output: Contribution to journalArticlepeer-review

73 Citations (Scopus)


The deep centers in unintentionally doped n-gallium nitride samples grown by metalorganic chemical-vapour deposition were subjected to plasma reactive ion etching. The deep-level transient spectroscopy (DLTS) was used to demonstrate that a well-known trap is enhanced in n-gallium nitride by plasma etching. The carrier concentrations in the control and plasma-etched samples were determined by the capacitance-voltage measurements.

Original languageEnglish
Pages (from-to)1562-1564
Number of pages3
JournalApplied Physics Letters
Issue number10
Publication statusPublished - Mar 10 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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