Plasma-induced damage study for n-GaN using inductively coupled plasma reactive ion etching

F. A. Khan, L. Zhou, V. Kumar, I. Adesida

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

Plasma-induced damage caused by inductively coupled plasma reactive ion etching in Cl2/Ar gas mixtures on GaN was extensively studied. ICP coil power and plasma exposure duration affected the plasma-induced damage minimally. Bias voltage was found to be the most significant cause of the plasma-induced damage. Auger electron spectroscopy of the etched samples showed that the plasma etching conditions being studied produced very little variation in the surface stoichiometry of the etched samples.

Original languageEnglish
Pages (from-to)2926-2929
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number6
DOIs
Publication statusPublished - Nov 1 2001

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Plasma-induced damage study for n-GaN using inductively coupled plasma reactive ion etching'. Together they form a unique fingerprint.

Cite this