Abstract
Zinc oxide (ZnO) is a material of great interest for short-wavelength optoelectronic applications due to its wide band gap (3.37 eV) and high exciton binding energy (60 meV). Due to the difficulty in stable p-type doping of ZnO, other p-type materials such as gallium nitride (GaN) have been used to form heterojunctions with ZnO. p-GaN/n-ZnO heterojunction devices, in particular light-emitting diodes (LED) have been extensively studied. There was a huge variety of electronic properties and emission colors on the reported devices. It is due to the different energy alignment at the interface caused by different properties of the GaN layer and ZnO counterpart in the junction. Attempts have been made on modifying the heterojunction by various methods, such as introducing a dielectric interlayer and post-growth surface treatment, and changing the growth methods of ZnO. In this study, heterojunction LED devices with p-GaN and ZnO nanorods array are demonstrated. The ZnO nanorods were grown by a solution method. The ZnO nanorods were exposed to different kinds of plasma treatments (such as nitrogen and oxygen) after the growth. It was found that the treatment could cause significant change on the optical properties of the ZnO nanorods, as well as the electronic properties and light emissions of the resultant LED devices.
| Original language | English |
|---|---|
| Title of host publication | Oxide-Based Materials and Devices V |
| Publisher | SPIE |
| Volume | 8987 |
| ISBN (Print) | 9780819499004 |
| DOIs | |
| Publication status | Published - Jan 1 2014 |
| Externally published | Yes |
| Event | 5th Annual Oxide Based Materials and Devices Conference - San Francisco, CA, United States Duration: Feb 2 2014 → Feb 5 2014 |
Conference
| Conference | 5th Annual Oxide Based Materials and Devices Conference |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 2/2/14 → 2/5/14 |
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Keywords
- Light-emitting diodes
- Nanorods
- Plasma treatment
- ZnO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
Plasma treatment of p -GaN /n -ZnO nanorod light-emitting diodes. / Leung, Yu Hang; Ng, Alan M.C.; Djurišic, Aleksandra B.; Chan, Wai Kin; Fong, Patrick W.K.; Lui, Hsien Fai; Surya, Charles.
Oxide-Based Materials and Devices V. Vol. 8987 SPIE, 2014. 898720.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Plasma treatment of p -GaN /n -ZnO nanorod light-emitting diodes
AU - Leung, Yu Hang
AU - Ng, Alan M.C.
AU - Djurišic, Aleksandra B.
AU - Chan, Wai Kin
AU - Fong, Patrick W.K.
AU - Lui, Hsien Fai
AU - Surya, Charles
PY - 2014/1/1
Y1 - 2014/1/1
N2 - Zinc oxide (ZnO) is a material of great interest for short-wavelength optoelectronic applications due to its wide band gap (3.37 eV) and high exciton binding energy (60 meV). Due to the difficulty in stable p-type doping of ZnO, other p-type materials such as gallium nitride (GaN) have been used to form heterojunctions with ZnO. p-GaN/n-ZnO heterojunction devices, in particular light-emitting diodes (LED) have been extensively studied. There was a huge variety of electronic properties and emission colors on the reported devices. It is due to the different energy alignment at the interface caused by different properties of the GaN layer and ZnO counterpart in the junction. Attempts have been made on modifying the heterojunction by various methods, such as introducing a dielectric interlayer and post-growth surface treatment, and changing the growth methods of ZnO. In this study, heterojunction LED devices with p-GaN and ZnO nanorods array are demonstrated. The ZnO nanorods were grown by a solution method. The ZnO nanorods were exposed to different kinds of plasma treatments (such as nitrogen and oxygen) after the growth. It was found that the treatment could cause significant change on the optical properties of the ZnO nanorods, as well as the electronic properties and light emissions of the resultant LED devices.
AB - Zinc oxide (ZnO) is a material of great interest for short-wavelength optoelectronic applications due to its wide band gap (3.37 eV) and high exciton binding energy (60 meV). Due to the difficulty in stable p-type doping of ZnO, other p-type materials such as gallium nitride (GaN) have been used to form heterojunctions with ZnO. p-GaN/n-ZnO heterojunction devices, in particular light-emitting diodes (LED) have been extensively studied. There was a huge variety of electronic properties and emission colors on the reported devices. It is due to the different energy alignment at the interface caused by different properties of the GaN layer and ZnO counterpart in the junction. Attempts have been made on modifying the heterojunction by various methods, such as introducing a dielectric interlayer and post-growth surface treatment, and changing the growth methods of ZnO. In this study, heterojunction LED devices with p-GaN and ZnO nanorods array are demonstrated. The ZnO nanorods were grown by a solution method. The ZnO nanorods were exposed to different kinds of plasma treatments (such as nitrogen and oxygen) after the growth. It was found that the treatment could cause significant change on the optical properties of the ZnO nanorods, as well as the electronic properties and light emissions of the resultant LED devices.
KW - Light-emitting diodes
KW - Nanorods
KW - Plasma treatment
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=84901769089&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84901769089&partnerID=8YFLogxK
U2 - 10.1117/12.2042305
DO - 10.1117/12.2042305
M3 - Conference contribution
SN - 9780819499004
VL - 8987
BT - Oxide-Based Materials and Devices V
PB - SPIE
ER -