Plasma treatment of p -GaN /n -ZnO nanorod light-emitting diodes

Yu Hang Leung, Alan M.C. Ng, Aleksandra B. Djurišic, Wai Kin Chan, Patrick W.K. Fong, Hsien Fai Lui, Charles Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Zinc oxide (ZnO) is a material of great interest for short-wavelength optoelectronic applications due to its wide band gap (3.37 eV) and high exciton binding energy (60 meV). Due to the difficulty in stable p-type doping of ZnO, other p-type materials such as gallium nitride (GaN) have been used to form heterojunctions with ZnO. p-GaN/n-ZnO heterojunction devices, in particular light-emitting diodes (LED) have been extensively studied. There was a huge variety of electronic properties and emission colors on the reported devices. It is due to the different energy alignment at the interface caused by different properties of the GaN layer and ZnO counterpart in the junction. Attempts have been made on modifying the heterojunction by various methods, such as introducing a dielectric interlayer and post-growth surface treatment, and changing the growth methods of ZnO. In this study, heterojunction LED devices with p-GaN and ZnO nanorods array are demonstrated. The ZnO nanorods were grown by a solution method. The ZnO nanorods were exposed to different kinds of plasma treatments (such as nitrogen and oxygen) after the growth. It was found that the treatment could cause significant change on the optical properties of the ZnO nanorods, as well as the electronic properties and light emissions of the resultant LED devices.

Original languageEnglish
Title of host publicationOxide-Based Materials and Devices V
PublisherSPIE
Volume8987
ISBN (Print)9780819499004
DOIs
Publication statusPublished - Jan 1 2014
Externally publishedYes
Event5th Annual Oxide Based Materials and Devices Conference - San Francisco, CA, United States
Duration: Feb 2 2014Feb 5 2014

Conference

Conference5th Annual Oxide Based Materials and Devices Conference
CountryUnited States
CitySan Francisco, CA
Period2/2/142/5/14

Fingerprint

Zinc Oxide
Gallium nitride
Nanorods
Nitrides
gallium nitrides
Zinc oxide
Diode
zinc oxides
nanorods
Light emitting diodes
light emitting diodes
Plasma
Plasmas
Heterojunction
Heterojunctions
heterojunctions
Electronic Properties
Electronic properties
gallium nitride
heterojunction devices

Keywords

  • Light-emitting diodes
  • Nanorods
  • Plasma treatment
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Leung, Y. H., Ng, A. M. C., Djurišic, A. B., Chan, W. K., Fong, P. W. K., Lui, H. F., & Surya, C. (2014). Plasma treatment of p -GaN /n -ZnO nanorod light-emitting diodes. In Oxide-Based Materials and Devices V (Vol. 8987). [898720] SPIE. https://doi.org/10.1117/12.2042305

Plasma treatment of p -GaN /n -ZnO nanorod light-emitting diodes. / Leung, Yu Hang; Ng, Alan M.C.; Djurišic, Aleksandra B.; Chan, Wai Kin; Fong, Patrick W.K.; Lui, Hsien Fai; Surya, Charles.

Oxide-Based Materials and Devices V. Vol. 8987 SPIE, 2014. 898720.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Leung, YH, Ng, AMC, Djurišic, AB, Chan, WK, Fong, PWK, Lui, HF & Surya, C 2014, Plasma treatment of p -GaN /n -ZnO nanorod light-emitting diodes. in Oxide-Based Materials and Devices V. vol. 8987, 898720, SPIE, 5th Annual Oxide Based Materials and Devices Conference, San Francisco, CA, United States, 2/2/14. https://doi.org/10.1117/12.2042305
Leung YH, Ng AMC, Djurišic AB, Chan WK, Fong PWK, Lui HF et al. Plasma treatment of p -GaN /n -ZnO nanorod light-emitting diodes. In Oxide-Based Materials and Devices V. Vol. 8987. SPIE. 2014. 898720 https://doi.org/10.1117/12.2042305
Leung, Yu Hang ; Ng, Alan M.C. ; Djurišic, Aleksandra B. ; Chan, Wai Kin ; Fong, Patrick W.K. ; Lui, Hsien Fai ; Surya, Charles. / Plasma treatment of p -GaN /n -ZnO nanorod light-emitting diodes. Oxide-Based Materials and Devices V. Vol. 8987 SPIE, 2014.
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AB - Zinc oxide (ZnO) is a material of great interest for short-wavelength optoelectronic applications due to its wide band gap (3.37 eV) and high exciton binding energy (60 meV). Due to the difficulty in stable p-type doping of ZnO, other p-type materials such as gallium nitride (GaN) have been used to form heterojunctions with ZnO. p-GaN/n-ZnO heterojunction devices, in particular light-emitting diodes (LED) have been extensively studied. There was a huge variety of electronic properties and emission colors on the reported devices. It is due to the different energy alignment at the interface caused by different properties of the GaN layer and ZnO counterpart in the junction. Attempts have been made on modifying the heterojunction by various methods, such as introducing a dielectric interlayer and post-growth surface treatment, and changing the growth methods of ZnO. In this study, heterojunction LED devices with p-GaN and ZnO nanorods array are demonstrated. The ZnO nanorods were grown by a solution method. The ZnO nanorods were exposed to different kinds of plasma treatments (such as nitrogen and oxygen) after the growth. It was found that the treatment could cause significant change on the optical properties of the ZnO nanorods, as well as the electronic properties and light emissions of the resultant LED devices.

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