We investigate a novel ultraconfined compound semiconductor device by using a two-dimensional iterative Poisson solver (TIPS). The novel device confines electrons into one-dimensional channels through the use of selective doping. The electron confinement is found to be a sensitive function of gate width and the implant dose of the selective doping and is limited by the lateral straggle of the implantation.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering