Poisson Modeling Of Ultraconfined Algaas-Gaas Semiconductor Devices With Selective Doping

J. M. Bigelow; J. P. Leburton; M. Klejwa; I. Adesida

doi:10.1109/16.47797

Poisson Modeling Of Ultraconfined Algaas-Gaas Semiconductor Devices With Selective Doping

J. M. Bigelow, J. P. Leburton, M. Klejwa, I. Adesida

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We investigate a novel ultraconfined compound semiconductor device by using a two-dimensional iterative Poisson solver (TIPS). The novel device confines electrons into one-dimensional channels through the use of selective doping. The electron confinement is found to be a sensitive function of gate width and the implant dose of the selective doping and is limited by the lateral straggle of the implantation.

Original language	English
Pages (from-to)	821-823
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	37
Issue number	3
DOIs	https://doi.org/10.1109/16.47797
Publication status	Published - Mar 1990

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Poisson Modeling Of Ultraconfined Algaas-Gaas Semiconductor Devices With Selective Doping",

abstract = "We investigate a novel ultraconfined compound semiconductor device by using a two-dimensional iterative Poisson solver (TIPS). The novel device confines electrons into one-dimensional channels through the use of selective doping. The electron confinement is found to be a sensitive function of gate width and the implant dose of the selective doping and is limited by the lateral straggle of the implantation.",

author = "Bigelow, {J. M.} and Leburton, {J. P.} and M. Klejwa and I. Adesida",

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AU - Adesida, I.

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