@article{f235d5978eb14eafa335af66a510df3e,
title = "Poisson Modeling Of Ultraconfined Algaas-Gaas Semiconductor Devices With Selective Doping",
abstract = "We investigate a novel ultraconfined compound semiconductor device by using a two-dimensional iterative Poisson solver (TIPS). The novel device confines electrons into one-dimensional channels through the use of selective doping. The electron confinement is found to be a sensitive function of gate width and the implant dose of the selective doping and is limited by the lateral straggle of the implantation.",
author = "Bigelow, {J. M.} and Leburton, {J. P.} and M. Klejwa and I. Adesida",
note = "Funding Information: I. INTRODUCTION A variety of one-dimensional (1-D) multichannel devices both in silicon [l], [2] and compound semiconductors have recently been conceived. Ultrafine etching techniques have been used to etch narrow and deep mesa structures directly into aluminum gallium arsenide (AlGaAs)/gallium arsenide (GaAs) heterostructures [3]. Fo- cused ion beam implantation has allowed the fabrication of very narrow channels either by implanting silicon in GaAs to make highly conductive channels [4], [5] or by intermixing gallium in AlCaAs to vary the relative concentrations [6].I n all of these cases Manuscript received November 6, 1989. This work was supported in part by the NSF under Grant 8719100, by the Engineering Research Center for Compound Semiconductor Microelectronics, and by the Joint Service Electronics Program of the University of Illinois. The review of this brief was arranged by Associate Editor S.-S. Pei.",
year = "1990",
month = mar,
doi = "10.1109/16.47797",
language = "English",
volume = "37",
pages = "821--823",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}