Poisson Modeling Of Ultraconfined Algaas-Gaas Semiconductor Devices With Selective Doping

J. M. Bigelow, J. P. Leburton, M. Klejwa, I. Adesida

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We investigate a novel ultraconfined compound semiconductor device by using a two-dimensional iterative Poisson solver (TIPS). The novel device confines electrons into one-dimensional channels through the use of selective doping. The electron confinement is found to be a sensitive function of gate width and the implant dose of the selective doping and is limited by the lateral straggle of the implantation.

Original languageEnglish
Pages (from-to)821-823
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume37
Issue number3
DOIs
Publication statusPublished - Mar 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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