Preparation and characterization of CuIn1 - xGaxSe2 - ySy thin film solar cells by rapid thermal processing

Sachin S. Kulkarni, Galymzhan T. Koishiyev, Helio Moutinho, Neelkanth G. Dhere

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

This paper describes the synthesis and characterization of CuIn1 - xGaxSe2 - ySy (CIGSeS) thin-film solar cells prepared by rapid thermal processing (RTP). An efficiency of 12.78% has been achieved on ~ 2 μm thick absorber. Materials characterization of these films was done by SEM, EDS, XRD, and AES. J-V curves were obtained at different temperatures. It was found that the open circuit voltage increases as temperature decreases while the short circuit current stays constant. Dependence of the open circuit voltage and fill factor on temperature has been estimated. Bandgap value calculated from the intercept of the linear extrapolation was 1.1-1.2 eV. Capacitance-voltage analysis gave a carrier density of 4.0 × 1015 cm- 3.

Original languageEnglish
Pages (from-to)2121-2124
Number of pages4
JournalThin Solid Films
Volume517
Issue number7
DOIs
Publication statusPublished - Feb 2 2009

Keywords

  • CuInGaSeS
  • Materials and electrical characterization
  • RTP

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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