Preparation and characterization of CuIn1 - xGaxSe2 - ySy thin film solar cells by rapid thermal processing

Sachin S. Kulkarni; Galymzhan T. Koishiyev; Helio Moutinho; Neelkanth G. Dhere

doi:10.1016/j.tsf.2008.10.128

Preparation and characterization of CuIn_{1 - x}Ga_xSe_{2 - y}S_y thin film solar cells by rapid thermal processing

Sachin S. Kulkarni, Galymzhan T. Koishiyev, Helio Moutinho, Neelkanth G. Dhere

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

This paper describes the synthesis and characterization of CuIn_{1 - x}Ga_xSe_{2 - y}S_y (CIGSeS) thin-film solar cells prepared by rapid thermal processing (RTP). An efficiency of 12.78% has been achieved on ~ 2 μm thick absorber. Materials characterization of these films was done by SEM, EDS, XRD, and AES. J-V curves were obtained at different temperatures. It was found that the open circuit voltage increases as temperature decreases while the short circuit current stays constant. Dependence of the open circuit voltage and fill factor on temperature has been estimated. Bandgap value calculated from the intercept of the linear extrapolation was 1.1-1.2 eV. Capacitance-voltage analysis gave a carrier density of 4.0 × 10¹⁵ cm^{- 3}.

Original language	English
Pages (from-to)	2121-2124
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	7
DOIs	https://doi.org/10.1016/j.tsf.2008.10.128
Publication status	Published - Feb 2 2009
Externally published	Yes

Keywords

CuInGaSeS
Materials and electrical characterization
RTP

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2008.10.128

Cite this

@article{b0dca55dadf64f16803f970431f86d66,

title = "Preparation and characterization of CuIn1 - xGaxSe2 - ySy thin film solar cells by rapid thermal processing",

abstract = "This paper describes the synthesis and characterization of CuIn1 - xGaxSe2 - ySy (CIGSeS) thin-film solar cells prepared by rapid thermal processing (RTP). An efficiency of 12.78% has been achieved on ~ 2 μm thick absorber. Materials characterization of these films was done by SEM, EDS, XRD, and AES. J-V curves were obtained at different temperatures. It was found that the open circuit voltage increases as temperature decreases while the short circuit current stays constant. Dependence of the open circuit voltage and fill factor on temperature has been estimated. Bandgap value calculated from the intercept of the linear extrapolation was 1.1-1.2 eV. Capacitance-voltage analysis gave a carrier density of 4.0 × 1015 cm- 3.",

keywords = "CuInGaSeS, Materials and electrical characterization, RTP",

author = "Kulkarni, {Sachin S.} and Koishiyev, {Galymzhan T.} and Helio Moutinho and Dhere, {Neelkanth G.}",

note = "Funding Information: The authors would like to acknowledge the kind help from Dr. Tom Moriarty and Keith Emery from NREL for carrying out the current-voltage measurements. This research was supported by NREL contract number XXL-5-44205-08 through the Thin-Film Partnership Program.",

year = "2009",

month = feb,

day = "2",

doi = "10.1016/j.tsf.2008.10.128",

language = "English",

volume = "517",

pages = "2121--2124",

journal = "Thin Solid Films",

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T1 - Preparation and characterization of CuIn1 - xGaxSe2 - ySy thin film solar cells by rapid thermal processing

AU - Kulkarni, Sachin S.

AU - Koishiyev, Galymzhan T.

AU - Moutinho, Helio

AU - Dhere, Neelkanth G.

N1 - Funding Information: The authors would like to acknowledge the kind help from Dr. Tom Moriarty and Keith Emery from NREL for carrying out the current-voltage measurements. This research was supported by NREL contract number XXL-5-44205-08 through the Thin-Film Partnership Program.

PY - 2009/2/2

Y1 - 2009/2/2

N2 - This paper describes the synthesis and characterization of CuIn1 - xGaxSe2 - ySy (CIGSeS) thin-film solar cells prepared by rapid thermal processing (RTP). An efficiency of 12.78% has been achieved on ~ 2 μm thick absorber. Materials characterization of these films was done by SEM, EDS, XRD, and AES. J-V curves were obtained at different temperatures. It was found that the open circuit voltage increases as temperature decreases while the short circuit current stays constant. Dependence of the open circuit voltage and fill factor on temperature has been estimated. Bandgap value calculated from the intercept of the linear extrapolation was 1.1-1.2 eV. Capacitance-voltage analysis gave a carrier density of 4.0 × 1015 cm- 3.

AB - This paper describes the synthesis and characterization of CuIn1 - xGaxSe2 - ySy (CIGSeS) thin-film solar cells prepared by rapid thermal processing (RTP). An efficiency of 12.78% has been achieved on ~ 2 μm thick absorber. Materials characterization of these films was done by SEM, EDS, XRD, and AES. J-V curves were obtained at different temperatures. It was found that the open circuit voltage increases as temperature decreases while the short circuit current stays constant. Dependence of the open circuit voltage and fill factor on temperature has been estimated. Bandgap value calculated from the intercept of the linear extrapolation was 1.1-1.2 eV. Capacitance-voltage analysis gave a carrier density of 4.0 × 1015 cm- 3.

KW - CuInGaSeS

KW - Materials and electrical characterization

KW - RTP

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