Preparation of Cu2ZnSnS4 films by electrodeposition using ionic liquids

Research output: Contribution to journalArticle

152 Citations (Scopus)

Abstract

We report a new technique for the growth of Cu2ZnSnS4 (CZTS) thin films. The CZTS thin films were successfully formed by electrodeposition in ionic liquid and sulfurized in elemental sulfur vapor ambient at 450 °C for 1.5 h using Argon as the carrier gas. Experimental data on X-ray diffraction indicated that the film has a kesterite structure with preferred grain orientation along (1 1 2). It is found that the energy bandgap of the film is about 1.49 eV and the optical absorption coefficient is in the order of 104 cm-1. The results are compared to a control film grown by e-beam deposition of elemental stacked layers followed by the same sulfurization process. The data show that the two films have comparable optoelectronic properties indicating that electrodeposition in ionic liquid is a viable process for the growth of CZTS films for applications in photovoltaic device. The XRD results also indicate an absence of the oxide peak in the material, which is commonly found in films grown by electrodeposition in aqueous solutions.

Original languageEnglish
Pages (from-to)207-211
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume94
Issue number2
DOIs
Publication statusPublished - Feb 1 2010
Externally publishedYes

Fingerprint

Ionic Liquids
Ionic liquids
Electrodeposition
Thin films
Argon
Sulfur
Optoelectronic devices
Oxides
Light absorption
Cu2ZnSnS4
Energy gap
Gases
Vapors
X ray diffraction

Keywords

  • Copper zinc tin sulfide
  • Electrodeposition
  • Ionic liquid
  • Photovoltaic material

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Cite this

Preparation of Cu2ZnSnS4 films by electrodeposition using ionic liquids. / Chan, C. P.; Lam, H.; Surya, C.

In: Solar Energy Materials and Solar Cells, Vol. 94, No. 2, 01.02.2010, p. 207-211.

Research output: Contribution to journalArticle

@article{44c2e0d08b324279aa6010306033f182,
title = "Preparation of Cu2ZnSnS4 films by electrodeposition using ionic liquids",
abstract = "We report a new technique for the growth of Cu2ZnSnS4 (CZTS) thin films. The CZTS thin films were successfully formed by electrodeposition in ionic liquid and sulfurized in elemental sulfur vapor ambient at 450 °C for 1.5 h using Argon as the carrier gas. Experimental data on X-ray diffraction indicated that the film has a kesterite structure with preferred grain orientation along (1 1 2). It is found that the energy bandgap of the film is about 1.49 eV and the optical absorption coefficient is in the order of 104 cm-1. The results are compared to a control film grown by e-beam deposition of elemental stacked layers followed by the same sulfurization process. The data show that the two films have comparable optoelectronic properties indicating that electrodeposition in ionic liquid is a viable process for the growth of CZTS films for applications in photovoltaic device. The XRD results also indicate an absence of the oxide peak in the material, which is commonly found in films grown by electrodeposition in aqueous solutions.",
keywords = "Copper zinc tin sulfide, Electrodeposition, Ionic liquid, Photovoltaic material",
author = "Chan, {C. P.} and H. Lam and C. Surya",
year = "2010",
month = "2",
day = "1",
doi = "10.1016/j.solmat.2009.09.003",
language = "English",
volume = "94",
pages = "207--211",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",
number = "2",

}

TY - JOUR

T1 - Preparation of Cu2ZnSnS4 films by electrodeposition using ionic liquids

AU - Chan, C. P.

AU - Lam, H.

AU - Surya, C.

PY - 2010/2/1

Y1 - 2010/2/1

N2 - We report a new technique for the growth of Cu2ZnSnS4 (CZTS) thin films. The CZTS thin films were successfully formed by electrodeposition in ionic liquid and sulfurized in elemental sulfur vapor ambient at 450 °C for 1.5 h using Argon as the carrier gas. Experimental data on X-ray diffraction indicated that the film has a kesterite structure with preferred grain orientation along (1 1 2). It is found that the energy bandgap of the film is about 1.49 eV and the optical absorption coefficient is in the order of 104 cm-1. The results are compared to a control film grown by e-beam deposition of elemental stacked layers followed by the same sulfurization process. The data show that the two films have comparable optoelectronic properties indicating that electrodeposition in ionic liquid is a viable process for the growth of CZTS films for applications in photovoltaic device. The XRD results also indicate an absence of the oxide peak in the material, which is commonly found in films grown by electrodeposition in aqueous solutions.

AB - We report a new technique for the growth of Cu2ZnSnS4 (CZTS) thin films. The CZTS thin films were successfully formed by electrodeposition in ionic liquid and sulfurized in elemental sulfur vapor ambient at 450 °C for 1.5 h using Argon as the carrier gas. Experimental data on X-ray diffraction indicated that the film has a kesterite structure with preferred grain orientation along (1 1 2). It is found that the energy bandgap of the film is about 1.49 eV and the optical absorption coefficient is in the order of 104 cm-1. The results are compared to a control film grown by e-beam deposition of elemental stacked layers followed by the same sulfurization process. The data show that the two films have comparable optoelectronic properties indicating that electrodeposition in ionic liquid is a viable process for the growth of CZTS films for applications in photovoltaic device. The XRD results also indicate an absence of the oxide peak in the material, which is commonly found in films grown by electrodeposition in aqueous solutions.

KW - Copper zinc tin sulfide

KW - Electrodeposition

KW - Ionic liquid

KW - Photovoltaic material

UR - http://www.scopus.com/inward/record.url?scp=72149116421&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72149116421&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2009.09.003

DO - 10.1016/j.solmat.2009.09.003

M3 - Article

VL - 94

SP - 207

EP - 211

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

IS - 2

ER -