Printed arrays of aligned GaAs wires for flexible transistors, diodes, and circuits on plastic substrates

Yugang Sun, Hoon Sik Kim, Etienne Menard, Seiyon Kim, Ilesanmi Adesida, John A. Rogers

Research output: Contribution to journalArticlepeer-review

66 Citations (Scopus)


The uses of micro and nanoscale wire of single-crystal inorganic semiconductors to fabricate flexible transistors, diodes, and circuits of plastic substrates were investigated. As Si nanowires that are synthesized through 'bottom-up' approaches can be assembled into aligned arrays using Langmuir-Blodgett techniques and used as transport channels for flexible thin-film transistors (TFT) on plastic substrates. Micro/nanoscale elements of Si in the form of ribbons were generated from high-quality, single-crystalline bulk sources through 'top-down' approaches can be used to fabricate flexible TFTs on plastic substrates with device mobilities. The top-down fabrication process is attractive because it offers the possibility of preserving the highly ordered organization of nano/microstructures defined at the wafer level during 'dry transfer printing' to the final device substrate. Flexible metal-semiconductor field-effect transistors (MESFET) are made by forming ohmic contacts on GaAs wires.

Original languageEnglish
Pages (from-to)1330-1334
Number of pages5
Issue number11
Publication statusPublished - Nov 1 2006


  • Flexible electronics
  • Gallium arsenide
  • Logic gates
  • Nanowire arrays
  • Schottky diodes

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

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