Process for en hancem ent/depletion-mode GaAs/InGaAs/AIGaAs Pseudomorphic modfets using selective wet gate recessing

M. Tong, K. Nummila, J. W. Seo, A. Ketterson, I. Adesida

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

A process for enhancement/depletion (E/D)-mode GaAs/ InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors (MODFETs) using citric acid: H2O2 solutions for selective wet gate recessing has been developed. Extrinsic DC transconductances gm as high as 450 and 600mS/mm, and unity current-gain cutoff frequencies ft of 75 and 66 GHz at room temperature have been achieved for 0·3 μm gate-length depletion-mode MODFET (DFET) and enhancement-mode MODFET (EFET), respectively. Standard deviations for threshold voltage and transconductance of less than 16 mV and 25mS/mm, respectively, have been achieved for both the DFETs and EFETs. Ring oscillators fabricated in direct-coupled FET logic technology have exhibited a propagation delay of 13ps at room temperature.

Original languageEnglish
Pages (from-to)1633-1634
Number of pages2
JournalElectronics Letters
Volume28
Issue number17
DOIs
Publication statusPublished - Aug 13 1992

Keywords

  • Field-effect transistors
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Process for en hancem ent/depletion-mode GaAs/InGaAs/AIGaAs Pseudomorphic modfets using selective wet gate recessing'. Together they form a unique fingerprint.

Cite this