Processes and device technologies for AlGaN/GaN high electron mobility transistors

I. Adesida; V. Kumar; F. Mohammed; L. Wang; A. Basu; D. H. Kim; W. Lanford

doi:10.1109/IEDM.2006.346797

Processes and device technologies for AlGaN/GaN high electron mobility transistors

I. Adesida, V. Kumar, F. Mohammed, L. Wang, A. Basu, D. H. Kim, W. Lanford

Nazarbayev University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The AlInGaN-based high electron mobility transistor (HEMT) has proven to be the leading candidate for simultaneously realizing ultra-high frequency and ultra-high power amplifiers. The potential for these devices extends into operation in the mm-wave regime. Processes and device technologies that have resulted in these tremendous improvements are addressed.

Original language	English
Title of host publication	2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs	https://doi.org/10.1109/IEDM.2006.346797
Publication status	Published - Dec 1 2006
Event	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States Duration: Dec 10 2006 → Dec 13 2006

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2006 International Electron Devices Meeting, IEDM
Country	United States
City	San Francisco, CA
Period	12/10/06 → 12/13/06

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2006.346797

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Processes and device technologies for AlGaN/GaN high electron mobility transistors. / Adesida, I.; Kumar, V.; Mohammed, F.; Wang, L.; Basu, A.; Kim, D. H.; Lanford, W.

2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154216 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Adesida, I, Kumar, V, Mohammed, F, Wang, L, Basu, A, Kim, DH & Lanford, W 2006, Processes and device technologies for AlGaN/GaN high electron mobility transistors. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154216, Technical Digest - International Electron Devices Meeting, IEDM, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 12/10/06. https://doi.org/10.1109/IEDM.2006.346797

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