Processes and device technologies for AlGaN/GaN high electron mobility transistors

I. Adesida, V. Kumar, F. Mohammed, L. Wang, A. Basu, D. H. Kim, W. Lanford

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The AlInGaN-based high electron mobility transistor (HEMT) has proven to be the leading candidate for simultaneously realizing ultra-high frequency and ultra-high power amplifiers. The potential for these devices extends into operation in the mm-wave regime. Processes and device technologies that have resulted in these tremendous improvements are addressed.

Original languageEnglish
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: Dec 10 2006 → Dec 13 2006

Other

Other2006 International Electron Devices Meeting, IEDM
CountryUnited States
CitySan Francisco, CA
Period12/10/06 → 12/13/06

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High electron mobility transistors
Power amplifiers

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Adesida, I., Kumar, V., Mohammed, F., Wang, L., Basu, A., Kim, D. H., & Lanford, W. (2006). Processes and device technologies for AlGaN/GaN high electron mobility transistors. In 2006 International Electron Devices Meeting Technical Digest, IEDM [4154216] https://doi.org/10.1109/IEDM.2006.346797

Processes and device technologies for AlGaN/GaN high electron mobility transistors. / Adesida, I.; Kumar, V.; Mohammed, F.; Wang, L.; Basu, A.; Kim, D. H.; Lanford, W.

2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154216.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Adesida, I, Kumar, V, Mohammed, F, Wang, L, Basu, A, Kim, DH & Lanford, W 2006, Processes and device technologies for AlGaN/GaN high electron mobility transistors. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154216, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 12/10/06. https://doi.org/10.1109/IEDM.2006.346797
Adesida I, Kumar V, Mohammed F, Wang L, Basu A, Kim DH et al. Processes and device technologies for AlGaN/GaN high electron mobility transistors. In 2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154216 https://doi.org/10.1109/IEDM.2006.346797
Adesida, I. ; Kumar, V. ; Mohammed, F. ; Wang, L. ; Basu, A. ; Kim, D. H. ; Lanford, W. / Processes and device technologies for AlGaN/GaN high electron mobility transistors. 2006 International Electron Devices Meeting Technical Digest, IEDM. 2006.
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