TY - GEN
T1 - Processes and device technologies for AlGaN/GaN high electron mobility transistors
AU - Adesida, I.
AU - Kumar, V.
AU - Mohammed, F.
AU - Wang, L.
AU - Basu, A.
AU - Kim, D. H.
AU - Lanford, W.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - The AlInGaN-based high electron mobility transistor (HEMT) has proven to be the leading candidate for simultaneously realizing ultra-high frequency and ultra-high power amplifiers. The potential for these devices extends into operation in the mm-wave regime. Processes and device technologies that have resulted in these tremendous improvements are addressed.
AB - The AlInGaN-based high electron mobility transistor (HEMT) has proven to be the leading candidate for simultaneously realizing ultra-high frequency and ultra-high power amplifiers. The potential for these devices extends into operation in the mm-wave regime. Processes and device technologies that have resulted in these tremendous improvements are addressed.
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U2 - 10.1109/IEDM.2006.346797
DO - 10.1109/IEDM.2006.346797
M3 - Conference contribution
AN - SCOPUS:46049115125
SN - 1424404398
SN - 9781424404391
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2006 International Electron Devices Meeting Technical Digest, IEDM
T2 - 2006 International Electron Devices Meeting, IEDM
Y2 - 10 December 2006 through 13 December 2006
ER -