TY - GEN
T1 - Processing and device issues in GaN and related compounds
AU - Adesida, Ilesanmi
PY - 2005/12/1
Y1 - 2005/12/1
N2 - Over the last decade, significant and rapid advances in the epitaxial growth of gallium nitride (GaN) and related wide bandgap materials have yielded exciting developments. Both optical and electronic devices have been demonstrated. Light emitting diodes (LEDs) and laser diodes (LDs) operating at various short wavelengths have been shown to be very reliable and are commercially available. AlGaN/GaN heterostructure field effect transistors (HFETs) demonstrating high bandwidths and record microwave powers have also been demonstrated. In spite of these advancements, there are still many issues to be resolved in terms of materials quality, processing methodologies (etching, high temperature stability of ohmic and Schottky contacts, etc), and device design and fabrication. In this talk, we will describe our work on photoelectrochemical (PEC) etching of GaN as a tool for material characterization and device fabrication. Revelations of defect structures especially edge and screw dislocations in n-GaN will be discussed. We will also describe our work on developing thermally stable ohmic and Schottky contacts, inductively-coupled- plasma reactive ion etching (ICP-RIE) for device fabrication. Lastly, results on DC, RF, CW power and microwave noise for AlGaN/GaN HFETs will be presented and discussed in the context of GaN material quality.
AB - Over the last decade, significant and rapid advances in the epitaxial growth of gallium nitride (GaN) and related wide bandgap materials have yielded exciting developments. Both optical and electronic devices have been demonstrated. Light emitting diodes (LEDs) and laser diodes (LDs) operating at various short wavelengths have been shown to be very reliable and are commercially available. AlGaN/GaN heterostructure field effect transistors (HFETs) demonstrating high bandwidths and record microwave powers have also been demonstrated. In spite of these advancements, there are still many issues to be resolved in terms of materials quality, processing methodologies (etching, high temperature stability of ohmic and Schottky contacts, etc), and device design and fabrication. In this talk, we will describe our work on photoelectrochemical (PEC) etching of GaN as a tool for material characterization and device fabrication. Revelations of defect structures especially edge and screw dislocations in n-GaN will be discussed. We will also describe our work on developing thermally stable ohmic and Schottky contacts, inductively-coupled- plasma reactive ion etching (ICP-RIE) for device fabrication. Lastly, results on DC, RF, CW power and microwave noise for AlGaN/GaN HFETs will be presented and discussed in the context of GaN material quality.
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U2 - 10.1109/WMED.2005.1431599
DO - 10.1109/WMED.2005.1431599
M3 - Conference contribution
AN - SCOPUS:33744475638
SN - 0780390725
SN - 9780780390720
T3 - 2005 IEEE Workshop on Microelectronics and Electron Devices, WMED
SP - 8
EP - 9
BT - 2005 IEEE Workshop on Microelectronics and Electron Devices, WMED
T2 - 2005 IEEE Workshop on Microelectronics and Electron Devices, WMED
Y2 - 15 April 2005 through 15 April 2005
ER -