Processing of InP and related compounds at nanometer dimensions

Ilesanmi Adesida, H. Chang, D. Ballegeer, X. Liu, Stephen G. Bishop, C. Caneau, Rajaram Bhat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Processes for the fabrication of nanometer-scale geometries in InP and related materials are discussed. Special emphasis is directed to pattern transfer using reactive ion etching in methane-hydrogen plasmas. Using these processes, 70 nm period gratings etched 900 nm deep in InP resulting in an aspect ratio of 25 is demonstrated. It is shown that these processes can be applied successfully to the fabrication of quantum wires in InP/InGaAs heterostructures. The high luminescence efficiency of these wires even at dimensions down to 40 nm shows that CH4/H2 reactive ion etching does not severely degrade the optical properties of quantum wires.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages218-227
Number of pages10
ISBN (Print)0819408379
Publication statusPublished - 1992
Externally publishedYes
EventAdvanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication - Somerset, NJ, USA
Duration: Mar 23 1992Mar 26 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1676
ISSN (Print)0277-786X

Other

OtherAdvanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
CitySomerset, NJ, USA
Period3/23/923/26/92

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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