Profile control by chemically assisted ion-beam and reactive ion beam etching

J. D. Chinn, I. Adesida, E. D. Wolf

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Investigations with broad-beam argon and reactive fluorinated ion beams have shown that the etched wall profiles of silicon at submicrometer linewidths can be controlled by varying the ion energy, current, and partial pressure of XeF2. Inert argon and reactive ion beams generated from xenon difluoride produced overcut profiles resulting from predominantly physical etching mechanisms. With very low partial pressures of XeF2 in the background ambient, purely chemical etching of silicon is low while enhanced line-on-sight ion-assisted etching can be used to produce vertical profiles. By increasing the background partial pressure of XeF2, undercut profiles were produced by purely chemical and chemically assisted ion beam mechanisms. Thus, various wall profiles were produced in silicon within the same broad-beam ion etching equipment using the same two-component gas system of Ar and XeF 2.

Original languageEnglish
Pages (from-to)185-187
Number of pages3
JournalApplied Physics Letters
Volume43
Issue number2
DOIs
Publication statusPublished - 1983
Externally publishedYes

Fingerprint

ion beams
etching
partial pressure
profiles
silicon
argon
difluorides
visual perception
xenon
ions
low pressure
gases
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Profile control by chemically assisted ion-beam and reactive ion beam etching. / Chinn, J. D.; Adesida, I.; Wolf, E. D.

In: Applied Physics Letters, Vol. 43, No. 2, 1983, p. 185-187.

Research output: Contribution to journalArticle

@article{9577649d01004e3688237f59168a24e9,
title = "Profile control by chemically assisted ion-beam and reactive ion beam etching",
abstract = "Investigations with broad-beam argon and reactive fluorinated ion beams have shown that the etched wall profiles of silicon at submicrometer linewidths can be controlled by varying the ion energy, current, and partial pressure of XeF2. Inert argon and reactive ion beams generated from xenon difluoride produced overcut profiles resulting from predominantly physical etching mechanisms. With very low partial pressures of XeF2 in the background ambient, purely chemical etching of silicon is low while enhanced line-on-sight ion-assisted etching can be used to produce vertical profiles. By increasing the background partial pressure of XeF2, undercut profiles were produced by purely chemical and chemically assisted ion beam mechanisms. Thus, various wall profiles were produced in silicon within the same broad-beam ion etching equipment using the same two-component gas system of Ar and XeF 2.",
author = "Chinn, {J. D.} and I. Adesida and Wolf, {E. D.}",
year = "1983",
doi = "10.1063/1.94274",
language = "English",
volume = "43",
pages = "185--187",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Profile control by chemically assisted ion-beam and reactive ion beam etching

AU - Chinn, J. D.

AU - Adesida, I.

AU - Wolf, E. D.

PY - 1983

Y1 - 1983

N2 - Investigations with broad-beam argon and reactive fluorinated ion beams have shown that the etched wall profiles of silicon at submicrometer linewidths can be controlled by varying the ion energy, current, and partial pressure of XeF2. Inert argon and reactive ion beams generated from xenon difluoride produced overcut profiles resulting from predominantly physical etching mechanisms. With very low partial pressures of XeF2 in the background ambient, purely chemical etching of silicon is low while enhanced line-on-sight ion-assisted etching can be used to produce vertical profiles. By increasing the background partial pressure of XeF2, undercut profiles were produced by purely chemical and chemically assisted ion beam mechanisms. Thus, various wall profiles were produced in silicon within the same broad-beam ion etching equipment using the same two-component gas system of Ar and XeF 2.

AB - Investigations with broad-beam argon and reactive fluorinated ion beams have shown that the etched wall profiles of silicon at submicrometer linewidths can be controlled by varying the ion energy, current, and partial pressure of XeF2. Inert argon and reactive ion beams generated from xenon difluoride produced overcut profiles resulting from predominantly physical etching mechanisms. With very low partial pressures of XeF2 in the background ambient, purely chemical etching of silicon is low while enhanced line-on-sight ion-assisted etching can be used to produce vertical profiles. By increasing the background partial pressure of XeF2, undercut profiles were produced by purely chemical and chemically assisted ion beam mechanisms. Thus, various wall profiles were produced in silicon within the same broad-beam ion etching equipment using the same two-component gas system of Ar and XeF 2.

UR - http://www.scopus.com/inward/record.url?scp=33750215971&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750215971&partnerID=8YFLogxK

U2 - 10.1063/1.94274

DO - 10.1063/1.94274

M3 - Article

VL - 43

SP - 185

EP - 187

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

ER -