PROFILE FORMATION IN CAIBE.

J. D. Chinn, I. Adesida, E. D. Wolf

Research output: Contribution to specialist publicationArticle

4 Citations (Scopus)

Abstract

The flexibility of broad-beam ion processing when used in conjunction with a chemistry assist technique is demonstrated. In this technique called chemically-assisted ion-beam etching (CAIBE), a chemically reactive gas is introduced into the sample chamber independent of a broad-beam of inert or reactive ions. This allows for a wide range of independent control of the chemical and ionic fluxes not available in other dry etching techniques. Using a two-component gas system of argon and xenon difluoride vapor under various operating conditions, the etched wall profiles of Si were found to be controllable. In addition, etch rates on various refractory metals and metal silicides using CAIBE with Cl//2 as the reactive background gas in the presence of Ar** plus ion bombardment are presented.

Original languageEnglish
Pages123-129
Number of pages7
Volume27
No.5
Specialist publicationSolid State Technology
Publication statusPublished - May 1984
Externally publishedYes

Fingerprint

Ion beams
Etching
ion beams
etching
profiles
Gases
gases
difluorides
refractory metals
Refractory metals
Silicides
Dry etching
silicides
Xenon
Ion bombardment
xenon
bombardment
Argon
flexibility
ions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Chinn, J. D., Adesida, I., & Wolf, E. D. (1984). PROFILE FORMATION IN CAIBE. Solid State Technology, 27(5), 123-129.

PROFILE FORMATION IN CAIBE. / Chinn, J. D.; Adesida, I.; Wolf, E. D.

In: Solid State Technology, Vol. 27, No. 5, 05.1984, p. 123-129.

Research output: Contribution to specialist publicationArticle

Chinn, JD, Adesida, I & Wolf, ED 1984, 'PROFILE FORMATION IN CAIBE.' Solid State Technology, vol. 27, no. 5, pp. 123-129.
Chinn JD, Adesida I, Wolf ED. PROFILE FORMATION IN CAIBE. Solid State Technology. 1984 May;27(5):123-129.
Chinn, J. D. ; Adesida, I. ; Wolf, E. D. / PROFILE FORMATION IN CAIBE. In: Solid State Technology. 1984 ; Vol. 27, No. 5. pp. 123-129.
@misc{b10eb6eb6b564842be984626dbc8656e,
title = "PROFILE FORMATION IN CAIBE.",
abstract = "The flexibility of broad-beam ion processing when used in conjunction with a chemistry assist technique is demonstrated. In this technique called chemically-assisted ion-beam etching (CAIBE), a chemically reactive gas is introduced into the sample chamber independent of a broad-beam of inert or reactive ions. This allows for a wide range of independent control of the chemical and ionic fluxes not available in other dry etching techniques. Using a two-component gas system of argon and xenon difluoride vapor under various operating conditions, the etched wall profiles of Si were found to be controllable. In addition, etch rates on various refractory metals and metal silicides using CAIBE with Cl//2 as the reactive background gas in the presence of Ar** plus ion bombardment are presented.",
author = "Chinn, {J. D.} and I. Adesida and Wolf, {E. D.}",
year = "1984",
month = "5",
language = "English",
volume = "27",
pages = "123--129",
journal = "Solid State Technology",
issn = "0038-111X",
publisher = "Pennwell Corporation",

}

TY - GEN

T1 - PROFILE FORMATION IN CAIBE.

AU - Chinn, J. D.

AU - Adesida, I.

AU - Wolf, E. D.

PY - 1984/5

Y1 - 1984/5

N2 - The flexibility of broad-beam ion processing when used in conjunction with a chemistry assist technique is demonstrated. In this technique called chemically-assisted ion-beam etching (CAIBE), a chemically reactive gas is introduced into the sample chamber independent of a broad-beam of inert or reactive ions. This allows for a wide range of independent control of the chemical and ionic fluxes not available in other dry etching techniques. Using a two-component gas system of argon and xenon difluoride vapor under various operating conditions, the etched wall profiles of Si were found to be controllable. In addition, etch rates on various refractory metals and metal silicides using CAIBE with Cl//2 as the reactive background gas in the presence of Ar** plus ion bombardment are presented.

AB - The flexibility of broad-beam ion processing when used in conjunction with a chemistry assist technique is demonstrated. In this technique called chemically-assisted ion-beam etching (CAIBE), a chemically reactive gas is introduced into the sample chamber independent of a broad-beam of inert or reactive ions. This allows for a wide range of independent control of the chemical and ionic fluxes not available in other dry etching techniques. Using a two-component gas system of argon and xenon difluoride vapor under various operating conditions, the etched wall profiles of Si were found to be controllable. In addition, etch rates on various refractory metals and metal silicides using CAIBE with Cl//2 as the reactive background gas in the presence of Ar** plus ion bombardment are presented.

UR - http://www.scopus.com/inward/record.url?scp=0021430419&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021430419&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0021430419

VL - 27

SP - 123

EP - 129

JO - Solid State Technology

JF - Solid State Technology

SN - 0038-111X

ER -