Properties of metamorphic materials and device structures on GaAs substrates

W. E. Hoke, T. D. Kennedy, A. Torabi, C. S. Whelan, P. F. Marsh, R. E. Leoni, S. M. Lardizabal, Y. Zhang, J. H. Jang, I. Adesida, C. Xu, K. C. Hsieh

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Metamorphic layer structures grown on GaAs substrates have been characterized and fabricated into high quality electrical and optical devices. The root mean square surface roughness of the metamorphic films is <15 Å, which is smaller than most device layer thicknesses. Cross-sectional transmission electron micrographs show that the dislocations necessarily formed during growth of the metamorphic buffer layer are predominantly contained in the buffer layer. Subsequently grown device layers exhibit planar interfaces. From plan view micrographs, the dislocation density is approximately 106cm-2 or less. The mobility of metamorphic high electron mobility transistor (HEMT) structures increases with indium content and is essentially equivalent to the mobility of the same structures grown lattice matched on InP substrates. The room temperature photoluminescence of transistor quantum wells is not degraded by growth on metamorphic buffer layers. High gain, low noise amplifiers have been demonstrated with long-term reliability. Metamorphic PIN photodiodes exhibit the same responsivities and bandwidths as InP PIN photodiodes. An integrated metamorphic PIN-HEMT layer structure has been grown. The responsivity of the PIN was 0.52 A/W with an unoptimized bandwidth approaching 30 GHz. The metamorphic high electron mobility transistor exhibited typical performance for current, transconductance, and pinch-off.

Original languageEnglish
Pages (from-to)804-810
Number of pages7
JournalJournal of Crystal Growth
Volume251
Issue number1-4
DOIs
Publication statusPublished - Apr 2003
Externally publishedYes

Fingerprint

High electron mobility transistors
Buffer layers
Photodiodes
Substrates
Bandwidth
high electron mobility transistors
Indium
Low noise amplifiers
Transconductance
Optical devices
buffers
Semiconductor quantum wells
Photoluminescence
Transistors
photodiodes
Surface roughness
Electrons
bandwidth
transconductance
gallium arsenide

Keywords

  • A1. Line defects
  • A3. Molecular beam epitaxy
  • B2. Semiconducting ternary materials
  • B3. High electron mobility transistors

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Hoke, W. E., Kennedy, T. D., Torabi, A., Whelan, C. S., Marsh, P. F., Leoni, R. E., ... Hsieh, K. C. (2003). Properties of metamorphic materials and device structures on GaAs substrates. Journal of Crystal Growth, 251(1-4), 804-810. https://doi.org/10.1016/S0022-0248(02)02374-6

Properties of metamorphic materials and device structures on GaAs substrates. / Hoke, W. E.; Kennedy, T. D.; Torabi, A.; Whelan, C. S.; Marsh, P. F.; Leoni, R. E.; Lardizabal, S. M.; Zhang, Y.; Jang, J. H.; Adesida, I.; Xu, C.; Hsieh, K. C.

In: Journal of Crystal Growth, Vol. 251, No. 1-4, 04.2003, p. 804-810.

Research output: Contribution to journalArticle

Hoke, WE, Kennedy, TD, Torabi, A, Whelan, CS, Marsh, PF, Leoni, RE, Lardizabal, SM, Zhang, Y, Jang, JH, Adesida, I, Xu, C & Hsieh, KC 2003, 'Properties of metamorphic materials and device structures on GaAs substrates', Journal of Crystal Growth, vol. 251, no. 1-4, pp. 804-810. https://doi.org/10.1016/S0022-0248(02)02374-6
Hoke WE, Kennedy TD, Torabi A, Whelan CS, Marsh PF, Leoni RE et al. Properties of metamorphic materials and device structures on GaAs substrates. Journal of Crystal Growth. 2003 Apr;251(1-4):804-810. https://doi.org/10.1016/S0022-0248(02)02374-6
Hoke, W. E. ; Kennedy, T. D. ; Torabi, A. ; Whelan, C. S. ; Marsh, P. F. ; Leoni, R. E. ; Lardizabal, S. M. ; Zhang, Y. ; Jang, J. H. ; Adesida, I. ; Xu, C. ; Hsieh, K. C. / Properties of metamorphic materials and device structures on GaAs substrates. In: Journal of Crystal Growth. 2003 ; Vol. 251, No. 1-4. pp. 804-810.
@article{fbcefa26a72b4e22a1f58298fd8e5c9d,
title = "Properties of metamorphic materials and device structures on GaAs substrates",
abstract = "Metamorphic layer structures grown on GaAs substrates have been characterized and fabricated into high quality electrical and optical devices. The root mean square surface roughness of the metamorphic films is <15 {\AA}, which is smaller than most device layer thicknesses. Cross-sectional transmission electron micrographs show that the dislocations necessarily formed during growth of the metamorphic buffer layer are predominantly contained in the buffer layer. Subsequently grown device layers exhibit planar interfaces. From plan view micrographs, the dislocation density is approximately 106cm-2 or less. The mobility of metamorphic high electron mobility transistor (HEMT) structures increases with indium content and is essentially equivalent to the mobility of the same structures grown lattice matched on InP substrates. The room temperature photoluminescence of transistor quantum wells is not degraded by growth on metamorphic buffer layers. High gain, low noise amplifiers have been demonstrated with long-term reliability. Metamorphic PIN photodiodes exhibit the same responsivities and bandwidths as InP PIN photodiodes. An integrated metamorphic PIN-HEMT layer structure has been grown. The responsivity of the PIN was 0.52 A/W with an unoptimized bandwidth approaching 30 GHz. The metamorphic high electron mobility transistor exhibited typical performance for current, transconductance, and pinch-off.",
keywords = "A1. Line defects, A3. Molecular beam epitaxy, B2. Semiconducting ternary materials, B3. High electron mobility transistors",
author = "Hoke, {W. E.} and Kennedy, {T. D.} and A. Torabi and Whelan, {C. S.} and Marsh, {P. F.} and Leoni, {R. E.} and Lardizabal, {S. M.} and Y. Zhang and Jang, {J. H.} and I. Adesida and C. Xu and Hsieh, {K. C.}",
year = "2003",
month = "4",
doi = "10.1016/S0022-0248(02)02374-6",
language = "English",
volume = "251",
pages = "804--810",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Properties of metamorphic materials and device structures on GaAs substrates

AU - Hoke, W. E.

AU - Kennedy, T. D.

AU - Torabi, A.

AU - Whelan, C. S.

AU - Marsh, P. F.

AU - Leoni, R. E.

AU - Lardizabal, S. M.

AU - Zhang, Y.

AU - Jang, J. H.

AU - Adesida, I.

AU - Xu, C.

AU - Hsieh, K. C.

PY - 2003/4

Y1 - 2003/4

N2 - Metamorphic layer structures grown on GaAs substrates have been characterized and fabricated into high quality electrical and optical devices. The root mean square surface roughness of the metamorphic films is <15 Å, which is smaller than most device layer thicknesses. Cross-sectional transmission electron micrographs show that the dislocations necessarily formed during growth of the metamorphic buffer layer are predominantly contained in the buffer layer. Subsequently grown device layers exhibit planar interfaces. From plan view micrographs, the dislocation density is approximately 106cm-2 or less. The mobility of metamorphic high electron mobility transistor (HEMT) structures increases with indium content and is essentially equivalent to the mobility of the same structures grown lattice matched on InP substrates. The room temperature photoluminescence of transistor quantum wells is not degraded by growth on metamorphic buffer layers. High gain, low noise amplifiers have been demonstrated with long-term reliability. Metamorphic PIN photodiodes exhibit the same responsivities and bandwidths as InP PIN photodiodes. An integrated metamorphic PIN-HEMT layer structure has been grown. The responsivity of the PIN was 0.52 A/W with an unoptimized bandwidth approaching 30 GHz. The metamorphic high electron mobility transistor exhibited typical performance for current, transconductance, and pinch-off.

AB - Metamorphic layer structures grown on GaAs substrates have been characterized and fabricated into high quality electrical and optical devices. The root mean square surface roughness of the metamorphic films is <15 Å, which is smaller than most device layer thicknesses. Cross-sectional transmission electron micrographs show that the dislocations necessarily formed during growth of the metamorphic buffer layer are predominantly contained in the buffer layer. Subsequently grown device layers exhibit planar interfaces. From plan view micrographs, the dislocation density is approximately 106cm-2 or less. The mobility of metamorphic high electron mobility transistor (HEMT) structures increases with indium content and is essentially equivalent to the mobility of the same structures grown lattice matched on InP substrates. The room temperature photoluminescence of transistor quantum wells is not degraded by growth on metamorphic buffer layers. High gain, low noise amplifiers have been demonstrated with long-term reliability. Metamorphic PIN photodiodes exhibit the same responsivities and bandwidths as InP PIN photodiodes. An integrated metamorphic PIN-HEMT layer structure has been grown. The responsivity of the PIN was 0.52 A/W with an unoptimized bandwidth approaching 30 GHz. The metamorphic high electron mobility transistor exhibited typical performance for current, transconductance, and pinch-off.

KW - A1. Line defects

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting ternary materials

KW - B3. High electron mobility transistors

UR - http://www.scopus.com/inward/record.url?scp=0037380496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037380496&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)02374-6

DO - 10.1016/S0022-0248(02)02374-6

M3 - Article

VL - 251

SP - 804

EP - 810

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -