Properties of metamorphic materials and device structures on GaAs substrates

W. E. Hoke, T. D. Kennedy, A. Torabi, C. S. Whelan, P. F. Marsh, R. E. Leoni, J. H. Jang, I. Adesida, K. L. Chang, K. C. Hsieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this work, the structural, optical, and electrical properties of metamorphic films are examined and compared to non-metamorphic films. Results for electrical and optical devices are presented. Finally the reliability of metamorphic HEMTs is examined.

Original languageEnglish
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages69-70
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
Publication statusPublished - 2002
Externally publishedYes
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: Sep 15 2002Sep 20 2002

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
CountryUnited States
CitySan Francisco
Period9/15/029/20/02

Fingerprint

High electron mobility transistors
Substrates
Optical devices
Structural properties
Electric properties
Optical properties
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Hoke, W. E., Kennedy, T. D., Torabi, A., Whelan, C. S., Marsh, P. F., Leoni, R. E., ... Hsieh, K. C. (2002). Properties of metamorphic materials and device structures on GaAs substrates. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 69-70). [1037763] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037763

Properties of metamorphic materials and device structures on GaAs substrates. / Hoke, W. E.; Kennedy, T. D.; Torabi, A.; Whelan, C. S.; Marsh, P. F.; Leoni, R. E.; Jang, J. H.; Adesida, I.; Chang, K. L.; Hsieh, K. C.

MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 69-70 1037763.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hoke, WE, Kennedy, TD, Torabi, A, Whelan, CS, Marsh, PF, Leoni, RE, Jang, JH, Adesida, I, Chang, KL & Hsieh, KC 2002, Properties of metamorphic materials and device structures on GaAs substrates. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037763, Institute of Electrical and Electronics Engineers Inc., pp. 69-70, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 9/15/02. https://doi.org/10.1109/MBE.2002.1037763
Hoke WE, Kennedy TD, Torabi A, Whelan CS, Marsh PF, Leoni RE et al. Properties of metamorphic materials and device structures on GaAs substrates. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc. 2002. p. 69-70. 1037763 https://doi.org/10.1109/MBE.2002.1037763
Hoke, W. E. ; Kennedy, T. D. ; Torabi, A. ; Whelan, C. S. ; Marsh, P. F. ; Leoni, R. E. ; Jang, J. H. ; Adesida, I. ; Chang, K. L. ; Hsieh, K. C. / Properties of metamorphic materials and device structures on GaAs substrates. MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 69-70
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