Properties of R.F. magnetron sputtered cadmium-tin-oxide and indium-tin-oxide thin films

Walter Wohlmuth, Ilesanmi Adesida

Research output: Contribution to journalArticlepeer-review

61 Citations (Scopus)

Abstract

The electrical, optical, structural, chemical, and etch properties of r.f. magnetron, sputter-deposited thin films of indium-tin-oxide (ITO) and cadmium-tin-oxide (CTO) are presented. Polycrystalline thin films of CTO and ITO with distinct diffraction peaks corresponding to the (220), (222), and (400) crystal planes and with an overall preferential 〈111〉 orientation were obtained at elevated deposition temperatures. The lattice parameter of these films was determined to be 0.948 and 1.026 nm for CTO and ITO, respectively. These thin films possess low resistivities in the 10-4 Ω cm range, Hall mobilities up to 30 cm2/V s, and carrier concentrations in the 1020 cm-3 range. In excess of 85% of the perpendicularly incident optical radiation, in the 0.85 to 1.55 μm wavelength range, and up to 50% of the incident radiation at a wavelength of 365 nm was transmitted through the CTO and ITO conductors. A variety of wet and dry etching techniques were investigated in order to delineate features in the thin films. From investigations concerned with the Schottky and ohmic contact characteristics of CTO and ITO films deposited on undoped AlGaAs and InAlAs, ideality factors ranging from 1.1 to 1.2 and Schottky barrier heights ranging from 0.67 to 1.05 eV were obtained.

Original languageEnglish
Pages (from-to)223-231
Number of pages9
JournalThin Solid Films
Volume479
Issue number1-2
DOIs
Publication statusPublished - May 23 2005

Keywords

  • Cadmium tin oxide
  • Etching
  • Indium tin oxide
  • Schottky barrier

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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