Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs

Charles Surya; W. Wang; W. K. Fong; C. H. Chan; P. T. Lai

Properties of Si-SiO₂ interface traps due to low-energy Ar⁺ backsurface bombardment in n-channel nitrided MOSFETs

Charles Surya, W. Wang, W. K. Fong, C. H. Chan, P. T. Lai

Research output: Contribution to conference › Paper

Abstract

Flicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from 10 to 40 minutes. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigations of the temperature dependencies of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO₂ interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO₂ interface.

Original language	English
Pages	77-80
Number of pages	4
Publication status	Published - Dec 1 1996
Externally published	Yes
Event	Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong Duration: Jun 29 1996 → Jun 29 1996

Conference

Conference	Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting
City	Hong Kong, Hong Kong
Period	6/29/96 → 6/29/96

ASJC Scopus subject areas

Engineering(all)

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Surya, C., Wang, W., Fong, W. K., Chan, C. H., & Lai, P. T. (1996). Properties of Si-SiO₂ interface traps due to low-energy Ar⁺ backsurface bombardment in n-channel nitrided MOSFETs. 77-80. Paper presented at Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting, Hong Kong, Hong Kong, .

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title = "Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs",

abstract = "Flicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from 10 to 40 minutes. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigations of the temperature dependencies of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.",

author = "Charles Surya and W. Wang and Fong, {W. K.} and Chan, {C. H.} and Lai, {P. T.}",

year = "1996",

month = dec,

day = "1",

language = "English",

pages = "77--80",

note = "Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting ; Conference date: 29-06-1996 Through 29-06-1996",

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T1 - Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs

AU - Surya, Charles

AU - Wang, W.

AU - Fong, W. K.

AU - Chan, C. H.

AU - Lai, P. T.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Flicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from 10 to 40 minutes. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigations of the temperature dependencies of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.

AB - Flicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from 10 to 40 minutes. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigations of the temperature dependencies of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.

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