Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs

Charles Surya, W. Wang, W. K. Fong, C. H. Chan, P. T. Lai

Research output: Contribution to conferencePaper

Abstract

Flicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from 10 to 40 minutes. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigations of the temperature dependencies of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.

Original languageEnglish
Pages77-80
Number of pages4
Publication statusPublished - Dec 1 1996
Externally publishedYes
EventProceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong
Duration: Jun 29 1996Jun 29 1996

Conference

ConferenceProceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting
CityHong Kong, Hong Kong
Period6/29/966/29/96

Fingerprint

Power spectrum
Stress relaxation
Chemical activation
Temperature
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Surya, C., Wang, W., Fong, W. K., Chan, C. H., & Lai, P. T. (1996). Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs. 77-80. Paper presented at Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting, Hong Kong, Hong Kong, .

Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs. / Surya, Charles; Wang, W.; Fong, W. K.; Chan, C. H.; Lai, P. T.

1996. 77-80 Paper presented at Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting, Hong Kong, Hong Kong, .

Research output: Contribution to conferencePaper

Surya, C, Wang, W, Fong, WK, Chan, CH & Lai, PT 1996, 'Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs' Paper presented at Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting, Hong Kong, Hong Kong, 6/29/96 - 6/29/96, pp. 77-80.
Surya C, Wang W, Fong WK, Chan CH, Lai PT. Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs. 1996. Paper presented at Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting, Hong Kong, Hong Kong, .
Surya, Charles ; Wang, W. ; Fong, W. K. ; Chan, C. H. ; Lai, P. T. / Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs. Paper presented at Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting, Hong Kong, Hong Kong, .4 p.
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