Abstract
Flicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from 10 to 40 minutes. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigations of the temperature dependencies of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.
| Original language | English |
|---|---|
| Pages | 77-80 |
| Number of pages | 4 |
| Publication status | Published - Dec 1 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong Duration: Jun 29 1996 → Jun 29 1996 |
Conference
| Conference | Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting |
|---|---|
| City | Hong Kong, Hong Kong |
| Period | 6/29/96 → 6/29/96 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs. / Surya, Charles; Wang, W.; Fong, W. K.; Chan, C. H.; Lai, P. T.
1996. 77-80 Paper presented at Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting, Hong Kong, Hong Kong, .Research output: Contribution to conference › Paper
}
TY - CONF
T1 - Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs
AU - Surya, Charles
AU - Wang, W.
AU - Fong, W. K.
AU - Chan, C. H.
AU - Lai, P. T.
PY - 1996/12/1
Y1 - 1996/12/1
N2 - Flicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from 10 to 40 minutes. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigations of the temperature dependencies of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.
AB - Flicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from 10 to 40 minutes. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigations of the temperature dependencies of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.
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M3 - Paper
SP - 77
EP - 80
ER -