Radiation resistance of AlN ceramics as a result of irradiation with low-energy C 2+ ions

T. Gladkikh, A. Kozlovskiy, K. Dukenbayev, M. Zdorovets

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9 Citations (Scopus)


The paper presents the results of a study of the radiation resistance of ceramic materials based on aluminum nitride. The irradiation was carried out by C 2+ ions with an energy of 40 keV with a fluence from 10 14 to 10 15 ion/cm 2 at an irradiation temperature of 300 K. On the basis of the data obtained by the XRD, SEM, EDX methods, the dependence of the change in crystallographic characteristics and strength properties from the irradiation dose was established. It is established that as a result of irradiation of the near-surface layer, formation of an impurity phase of Al 4 C 3 is observed, which leads to an increase in parameters of the crystal lattice, which indicates the implantation of C 2+ ions and the formation of the implantation phase in the structure. In this case, an increase in contributions of the impurity phases leads to a decrease in the intensity of diffraction peaks, as well as their asymmetry, which is caused by an increase in microstresses and deformations in the lattice. The decrease in hardness and strength characteristics can be explained by the formation of regions of structure disorder in the near-surface layer, as well as the increase in material porosity due to the change in density.

Original languageEnglish
Pages (from-to)88-97
Number of pages10
JournalMaterials Characterization
Publication statusPublished - Apr 1 2019


  • Ceramic materials
  • Crystal surface
  • Heavy ions
  • Hillocks
  • Radiation defects

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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