RADIOLYSIS AND RESOLUTION LIMITS OF INORGANIC HALIDE RESISTS.

A. Muray, M. Isaacson, I. Adesida, M. Scheinfein

Research output: Chapter in Book/Report/Conference proceedingConference contribution

59 Citations (Scopus)

Abstract

Patterning at the 1-2 nm size scale has been demonstrated with self-developing metal halide resists using a subnanometer diameter 100 kev electron beam. Electron energy loss spectroscopy during lithographic exposure indicates removal of the halide ion first, followed by displacement of the metal ions. Under appropriate exposure of AlF//3, it has been demonstrated that aluminum metal structures can be fabricated in situ. Nanometer scale patterns have been replicated into Si//3N//4 via reactive ion etching using AlF//3 as the resist mask.

Original languageEnglish
Title of host publicationJournal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Pages367-372
Number of pages6
Volume3
Edition1
DOIs
Publication statusPublished - Jan 1 1984
EventProc of the 1984 Int Symp on Electron, Ion, and Photon Beams - Tarrytown, NY, USA
Duration: May 29 1984Jun 1 1984

Other

OtherProc of the 1984 Int Symp on Electron, Ion, and Photon Beams
CityTarrytown, NY, USA
Period5/29/846/1/84

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Muray, A., Isaacson, M., Adesida, I., & Scheinfein, M. (1984). RADIOLYSIS AND RESOLUTION LIMITS OF INORGANIC HALIDE RESISTS. In Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena (1 ed., Vol. 3, pp. 367-372) https://doi.org/10.1116/1.583265