Abstract
Patterning at the 1-2 nm size scale has been demonstrated with self-developing metal halide resists using a subnanometer diameter 100 kev electron beam. Electron energy loss spectroscopy during lithographic exposure indicates removal of the halide ion first, followed by displacement of the metal ions. Under appropriate exposure of AlF//3, it has been demonstrated that aluminum metal structures can be fabricated in situ. Nanometer scale patterns have been replicated into Si//3N//4 via reactive ion etching using AlF//3 as the resist mask.
| Original language | English |
|---|---|
| Title of host publication | Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena |
| Pages | 367-372 |
| Number of pages | 6 |
| Volume | 3 |
| Edition | 1 |
| DOIs | |
| Publication status | Published - Jan 1 1984 |
| Event | Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams - Tarrytown, NY, USA Duration: May 29 1984 → Jun 1 1984 |
Other
| Other | Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams |
|---|---|
| City | Tarrytown, NY, USA |
| Period | 5/29/84 → 6/1/84 |
ASJC Scopus subject areas
- Engineering(all)
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Cite this
Muray, A., Isaacson, M., Adesida, I., & Scheinfein, M. (1984). RADIOLYSIS AND RESOLUTION LIMITS OF INORGANIC HALIDE RESISTS. In Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena (1 ed., Vol. 3, pp. 367-372) https://doi.org/10.1116/1.583265