RADIOLYSIS AND RESOLUTION LIMITS OF INORGANIC HALIDE RESISTS.

A. Muray; M. Isaacson; I. Adesida; M. Scheinfein

doi:10.1116/1.583265

RADIOLYSIS AND RESOLUTION LIMITS OF INORGANIC HALIDE RESISTS.

A. Muray, M. Isaacson, I. Adesida, M. Scheinfein

Nazarbayev University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

59 Citations (Scopus)

Abstract

Patterning at the 1-2 nm size scale has been demonstrated with self-developing metal halide resists using a subnanometer diameter 100 kev electron beam. Electron energy loss spectroscopy during lithographic exposure indicates removal of the halide ion first, followed by displacement of the metal ions. Under appropriate exposure of AlF//3, it has been demonstrated that aluminum metal structures can be fabricated in situ. Nanometer scale patterns have been replicated into Si//3N//4 via reactive ion etching using AlF//3 as the resist mask.

Original language	English
Title of host publication	Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Pages	367-372
Number of pages	6
Volume	3
Edition	1
DOIs	https://doi.org/10.1116/1.583265
Publication status	Published - Jan 1 1984
Event	Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams - Tarrytown, NY, USA Duration: May 29 1984 → Jun 1 1984

Other

Other	Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams
City	Tarrytown, NY, USA
Period	5/29/84 → 6/1/84

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1116/1.583265

Fingerprint Dive into the research topics of 'RADIOLYSIS AND RESOLUTION LIMITS OF INORGANIC HALIDE RESISTS.'. Together they form a unique fingerprint.

Cite this

@inproceedings{8857db05c59c43ab96c736fc9a6257ff,

title = "RADIOLYSIS AND RESOLUTION LIMITS OF INORGANIC HALIDE RESISTS.",

abstract = "Patterning at the 1-2 nm size scale has been demonstrated with self-developing metal halide resists using a subnanometer diameter 100 kev electron beam. Electron energy loss spectroscopy during lithographic exposure indicates removal of the halide ion first, followed by displacement of the metal ions. Under appropriate exposure of AlF//3, it has been demonstrated that aluminum metal structures can be fabricated in situ. Nanometer scale patterns have been replicated into Si//3N//4 via reactive ion etching using AlF//3 as the resist mask.",

author = "A. Muray and M. Isaacson and I. Adesida and M. Scheinfein",

year = "1984",

month = jan,

day = "1",

doi = "10.1116/1.583265",

language = "English",

isbn = "0883184648",

volume = "3",

pages = "367--372",

booktitle = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",

edition = "1",

note = "Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams ; Conference date: 29-05-1984 Through 01-06-1984",

}

TY - GEN

T1 - RADIOLYSIS AND RESOLUTION LIMITS OF INORGANIC HALIDE RESISTS.

AU - Muray, A.

AU - Isaacson, M.

AU - Adesida, I.

AU - Scheinfein, M.

PY - 1984/1/1

Y1 - 1984/1/1

N2 - Patterning at the 1-2 nm size scale has been demonstrated with self-developing metal halide resists using a subnanometer diameter 100 kev electron beam. Electron energy loss spectroscopy during lithographic exposure indicates removal of the halide ion first, followed by displacement of the metal ions. Under appropriate exposure of AlF//3, it has been demonstrated that aluminum metal structures can be fabricated in situ. Nanometer scale patterns have been replicated into Si//3N//4 via reactive ion etching using AlF//3 as the resist mask.

AB - Patterning at the 1-2 nm size scale has been demonstrated with self-developing metal halide resists using a subnanometer diameter 100 kev electron beam. Electron energy loss spectroscopy during lithographic exposure indicates removal of the halide ion first, followed by displacement of the metal ions. Under appropriate exposure of AlF//3, it has been demonstrated that aluminum metal structures can be fabricated in situ. Nanometer scale patterns have been replicated into Si//3N//4 via reactive ion etching using AlF//3 as the resist mask.

UR - http://www.scopus.com/inward/record.url?scp=0021117658&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021117658&partnerID=8YFLogxK

U2 - 10.1116/1.583265

DO - 10.1116/1.583265

M3 - Conference contribution

AN - SCOPUS:0021117658

SN - 0883184648

VL - 3

SP - 367

EP - 372

BT - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

T2 - Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams

Y2 - 29 May 1984 through 1 June 1984

ER -