Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd: YAG laser lift-off

H. P. Ho, K. C. Lo, G. G. Siu, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Gallium nitride (GaN) thin films grown on sapphire substrates were successfully lifted onto silicon wafers using a laser lift-off (LLO) process induced by a 532 nm, Nd:YAG pulsed laser. Although the photon energy (2.33 eV) is much lower than the band gap of hexagonal GaN (3.41 eV), free-carriers absorption can heat up and consequently causes detachment of the GaN film from the sapphire substrate. Raman measurement conducted before and after LLO showed that the surface structure of the lifted GaN changed from hexagonal to a cubic structure.

Original languageEnglish
Title of host publicationProceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages111-115
Number of pages5
Volume2002-January
ISBN (Electronic)0780374290
DOIs
Publication statusPublished - Jan 1 2002
Externally publishedYes
Event9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 - Hong Kong, China
Duration: Jun 22 2002 → …

Publication series

NameProceedings of the IEEE Hong Kong Electron Devices Meeting
Volume2002-January

Conference

Conference9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
CountryChina
CityHong Kong
Period6/22/02 → …

Keywords

  • Absorption
  • Gallium nitride
  • III-V semiconductor materials
  • Optical pulses
  • Photonic band gap
  • Raman scattering
  • Semiconductor thin films
  • Silicon
  • Spectroscopy
  • Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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