Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd: YAG laser lift-off

H. P. Ho; K. C. Lo; G. G. Siu; C. Surya

doi:10.1109/HKEDM.2002.1029169

Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd: YAG laser lift-off

H. P. Ho, K. C. Lo, G. G. Siu, C. Surya

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Gallium nitride (GaN) thin films grown on sapphire substrates were successfully lifted onto silicon wafers using a laser lift-off (LLO) process induced by a 532 nm, Nd:YAG pulsed laser. Although the photon energy (2.33 eV) is much lower than the band gap of hexagonal GaN (3.41 eV), free-carriers absorption can heat up and consequently causes detachment of the GaN film from the sapphire substrate. Raman measurement conducted before and after LLO showed that the surface structure of the lifted GaN changed from hexagonal to a cubic structure.

Original language	English
Title of host publication	Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	111-115
Number of pages	5
Volume	2002-January
ISBN (Electronic)	0780374290
DOIs	https://doi.org/10.1109/HKEDM.2002.1029169
Publication status	Published - Jan 1 2002
Externally published	Yes
Event	9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 - Hong Kong, China Duration: Jun 22 2002 → …

Publication series

Name	Proceedings of the IEEE Hong Kong Electron Devices Meeting
Volume	2002-January

Conference

Conference	9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
Country	China
City	Hong Kong
Period	6/22/02 → …

Keywords

Absorption
Gallium nitride
III-V semiconductor materials
Optical pulses
Photonic band gap
Raman scattering
Semiconductor thin films
Silicon
Spectroscopy
Substrates

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1109/HKEDM.2002.1029169

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Ho, H. P., Lo, K. C., Siu, G. G., & Surya, C. (2002). Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd: YAG laser lift-off. In Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 (Vol. 2002-January, pp. 111-115). [1029169] (Proceedings of the IEEE Hong Kong Electron Devices Meeting; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/HKEDM.2002.1029169

Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd : YAG laser lift-off. / Ho, H. P.; Lo, K. C.; Siu, G. G.; Surya, C.

Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002. Vol. 2002-January Institute of Electrical and Electronics Engineers Inc., 2002. p. 111-115 1029169 (Proceedings of the IEEE Hong Kong Electron Devices Meeting; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ho, HP, Lo, KC, Siu, GG & Surya, C 2002, Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd: YAG laser lift-off. in Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002. vol. 2002-January, 1029169, Proceedings of the IEEE Hong Kong Electron Devices Meeting, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 111-115, 9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002, Hong Kong, China, 6/22/02. https://doi.org/10.1109/HKEDM.2002.1029169

Ho HP, Lo KC, Siu GG, Surya C. Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd: YAG laser lift-off. In Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002. Vol. 2002-January. Institute of Electrical and Electronics Engineers Inc. 2002. p. 111-115. 1029169. (Proceedings of the IEEE Hong Kong Electron Devices Meeting). https://doi.org/10.1109/HKEDM.2002.1029169

Ho, H. P. ; Lo, K. C. ; Siu, G. G. ; Surya, C. / Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd : YAG laser lift-off. Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002. Vol. 2002-January Institute of Electrical and Electronics Engineers Inc., 2002. pp. 111-115 (Proceedings of the IEEE Hong Kong Electron Devices Meeting).

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abstract = "Gallium nitride (GaN) thin films grown on sapphire substrates were successfully lifted onto silicon wafers using a laser lift-off (LLO) process induced by a 532 nm, Nd:YAG pulsed laser. Although the photon energy (2.33 eV) is much lower than the band gap of hexagonal GaN (3.41 eV), free-carriers absorption can heat up and consequently causes detachment of the GaN film from the sapphire substrate. Raman measurement conducted before and after LLO showed that the surface structure of the lifted GaN changed from hexagonal to a cubic structure.",

keywords = "Absorption, Gallium nitride, III-V semiconductor materials, Optical pulses, Photonic band gap, Raman scattering, Semiconductor thin films, Silicon, Spectroscopy, Substrates",

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