REACTIVE ION ETCHING FOR SUBMICRON STRUCTURES.

J. D. Chinn, I. Adesida, E. D. Wolf, R. C. Tiberio

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

The etch resistance of PMMA was measured under various reactive ion etching conditions and compared with that of silicon dioxide, silicon and Shipley AZ 1350 resist. The resulting profiles transferred into the substrates masked with PMMA were also studied under various reactive ion etching conditions. This study shows that PMMA can be used as a masking resist for etching silicon dioxide using fluorine-deficient etch gases. Linewidths with dimensions of 0. 1 mu m have been obtained in silicon dioxide with usable selectivity between PMMA and silicon dioxide.

Original languageEnglish
Pages (from-to)1418-1422
Number of pages5
JournalJournal of vacuum science & technology
Volume19
Issue number4
DOIs
Publication statusPublished - Jan 1 1981
EventProc of the Electron, Ion, and Photon Beam Technol, 16th - Dallas, TX, USA
Duration: May 26 1981May 29 1981

ASJC Scopus subject areas

  • Engineering(all)

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