REACTIVE ION ETCHING FOR SUBMICRON STRUCTURES.

J. D. Chinn; I. Adesida; E. D. Wolf; R. C. Tiberio

doi:10.1116/1.571222

REACTIVE ION ETCHING FOR SUBMICRON STRUCTURES.

J. D. Chinn, I. Adesida, E. D. Wolf, R. C. Tiberio

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Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

The etch resistance of PMMA was measured under various reactive ion etching conditions and compared with that of silicon dioxide, silicon and Shipley AZ 1350 resist. The resulting profiles transferred into the substrates masked with PMMA were also studied under various reactive ion etching conditions. This study shows that PMMA can be used as a masking resist for etching silicon dioxide using fluorine-deficient etch gases. Linewidths with dimensions of 0. 1 mu m have been obtained in silicon dioxide with usable selectivity between PMMA and silicon dioxide.

Original language	English
Pages (from-to)	1418-1422
Number of pages	5
Journal	Journal of vacuum science & technology
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.571222
Publication status	Published - 1981
Event	Proc of the Electron, Ion, and Photon Beam Technol, 16th - Dallas, TX, USA Duration: May 26 1981 → May 29 1981

ASJC Scopus subject areas

General Engineering

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10.1116/1.571222

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@article{210e22a3f744433f8057da61c716e053,

title = "REACTIVE ION ETCHING FOR SUBMICRON STRUCTURES.",

abstract = "The etch resistance of PMMA was measured under various reactive ion etching conditions and compared with that of silicon dioxide, silicon and Shipley AZ 1350 resist. The resulting profiles transferred into the substrates masked with PMMA were also studied under various reactive ion etching conditions. This study shows that PMMA can be used as a masking resist for etching silicon dioxide using fluorine-deficient etch gases. Linewidths with dimensions of 0. 1 mu m have been obtained in silicon dioxide with usable selectivity between PMMA and silicon dioxide.",

author = "Chinn, {J. D.} and I. Adesida and Wolf, {E. D.} and Tiberio, {R. C.}",

year = "1981",

doi = "10.1116/1.571222",

language = "English",

volume = "19",

pages = "1418--1422",

journal = "Journal of vacuum science & technology",

issn = "0022-5355",

publisher = "American Institute of Physics Publising LLC",

number = "4",

note = "Proc of the Electron, Ion, and Photon Beam Technol, 16th ; Conference date: 26-05-1981 Through 29-05-1981",

}

TY - JOUR

T1 - REACTIVE ION ETCHING FOR SUBMICRON STRUCTURES.

AU - Chinn, J. D.

AU - Adesida, I.

AU - Wolf, E. D.

AU - Tiberio, R. C.

PY - 1981

Y1 - 1981

N2 - The etch resistance of PMMA was measured under various reactive ion etching conditions and compared with that of silicon dioxide, silicon and Shipley AZ 1350 resist. The resulting profiles transferred into the substrates masked with PMMA were also studied under various reactive ion etching conditions. This study shows that PMMA can be used as a masking resist for etching silicon dioxide using fluorine-deficient etch gases. Linewidths with dimensions of 0. 1 mu m have been obtained in silicon dioxide with usable selectivity between PMMA and silicon dioxide.

AB - The etch resistance of PMMA was measured under various reactive ion etching conditions and compared with that of silicon dioxide, silicon and Shipley AZ 1350 resist. The resulting profiles transferred into the substrates masked with PMMA were also studied under various reactive ion etching conditions. This study shows that PMMA can be used as a masking resist for etching silicon dioxide using fluorine-deficient etch gases. Linewidths with dimensions of 0. 1 mu m have been obtained in silicon dioxide with usable selectivity between PMMA and silicon dioxide.

UR - http://www.scopus.com/inward/record.url?scp=0019635879&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019635879&partnerID=8YFLogxK

U2 - 10.1116/1.571222

DO - 10.1116/1.571222

M3 - Conference article

AN - SCOPUS:0019635879

SN - 0022-5355

VL - 19

SP - 1418

EP - 1422

JO - Journal of vacuum science & technology

JF - Journal of vacuum science & technology

IS - 4

T2 - Proc of the Electron, Ion, and Photon Beam Technol, 16th

Y2 - 26 May 1981 through 29 May 1981

ER -

REACTIVE ION ETCHING FOR SUBMICRON STRUCTURES.

Abstract

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