REACTIVE ION ETCHING FOR SUBMICRON STRUCTURES.

J. D. Chinn, I. Adesida, E. D. Wolf, R. C. Tiberio

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The etch resistance of PMMA was measured under various reactive ion etching conditions and compared with that of silicon dioxide, silicon and Shipley AZ 1350 resist. The resulting profiles transferred into the substrates masked with PMMA were also studied under various reactive ion etching conditions. This study shows that PMMA can be used as a masking resist for etching silicon dioxide using fluorine-deficient etch gases. Linewidths with dimensions of 0. 1 mu m have been obtained in silicon dioxide with usable selectivity between PMMA and silicon dioxide.

Original languageEnglish
Pages (from-to)1418-1422
Number of pages5
JournalJ VAC SCI TECHNOL
Volume19
Issue number4
DOIs
Publication statusPublished - Nov 1981
Externally publishedYes

Fingerprint

Reactive ion etching
Silica
Fluorine
Linewidth
Etching
Silicon
Substrates
Gases

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Chinn, J. D., Adesida, I., Wolf, E. D., & Tiberio, R. C. (1981). REACTIVE ION ETCHING FOR SUBMICRON STRUCTURES. J VAC SCI TECHNOL, 19(4), 1418-1422. https://doi.org/10.1116/1.571222

REACTIVE ION ETCHING FOR SUBMICRON STRUCTURES. / Chinn, J. D.; Adesida, I.; Wolf, E. D.; Tiberio, R. C.

In: J VAC SCI TECHNOL, Vol. 19, No. 4, 11.1981, p. 1418-1422.

Research output: Contribution to journalArticle

Chinn, JD, Adesida, I, Wolf, ED & Tiberio, RC 1981, 'REACTIVE ION ETCHING FOR SUBMICRON STRUCTURES.', J VAC SCI TECHNOL, vol. 19, no. 4, pp. 1418-1422. https://doi.org/10.1116/1.571222
Chinn, J. D. ; Adesida, I. ; Wolf, E. D. ; Tiberio, R. C. / REACTIVE ION ETCHING FOR SUBMICRON STRUCTURES. In: J VAC SCI TECHNOL. 1981 ; Vol. 19, No. 4. pp. 1418-1422.
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