REACTIVE ION ETCHING FOR SUBMICRON STRUCTURES OF REFRACTORY METAL SILICIDES AND POLYCIDES.

M. Zhang, J. Z. Li, I. Adesida, E. D. Wolf

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Reactive ion etching experiments have been conducted on sputter-deposited films of MoSi//2, CVD n** plus polysilicon, and thermal SiO//2 using admixtures of SF//6 with O//2. The influence of partial pressure and total pressure on profile control and etch selectivity has been determined. Highly anisotropic etching of n** plus polysilicon and MoSi//2 was obtained using a gas mixture of SF//6 plus 50% oxygen. Examples of 0. 2 mu anisotropically etched structures of silicides and n** plus polysilicon/silicide stacked films have ben realized using electron beam lithography and one step dry etching. Mechanisms of profile control involved in the SF//6/O//2 system are discussed. In addition, exploratory reactive ion etching studies using SiF//4/Cl//2 gas mixtures for these materials and TaSi//2 have been carried out.

Original languageEnglish
Pages (from-to)1037-1042
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number4
DOIs
Publication statusPublished - Oct 1983
Externally publishedYes

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Refractory metals
Silicides
Reactive ion etching
Polysilicon
Gas mixtures
Anisotropic etching
Dry etching
Electron beam lithography
Partial pressure
Chemical vapor deposition
Oxygen
Experiments

ASJC Scopus subject areas

  • Engineering(all)

Cite this

REACTIVE ION ETCHING FOR SUBMICRON STRUCTURES OF REFRACTORY METAL SILICIDES AND POLYCIDES. / Zhang, M.; Li, J. Z.; Adesida, I.; Wolf, E. D.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 1, No. 4, 10.1983, p. 1037-1042.

Research output: Contribution to journalArticle

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