REACTIVE ION ETCHING FOR SUBMICRON STRUCTURES OF REFRACTORY METAL SILICIDES AND POLYCIDES.

M. Zhang, J. Z. Li, I. Adesida, E. D. Wolf

Research output: Contribution to journalConference article

30 Citations (Scopus)

Abstract

Reactive ion etching experiments have been conducted on sputter-deposited films of MoSi//2, CVD n** plus polysilicon, and thermal SiO//2 using admixtures of SF//6 with O//2. The influence of partial pressure and total pressure on profile control and etch selectivity has been determined. Highly anisotropic etching of n** plus polysilicon and MoSi//2 was obtained using a gas mixture of SF//6 plus 50% oxygen. Examples of 0. 2 mu anisotropically etched structures of silicides and n** plus polysilicon/silicide stacked films have ben realized using electron beam lithography and one step dry etching. Mechanisms of profile control involved in the SF//6/O//2 system are discussed. In addition, exploratory reactive ion etching studies using SiF//4/Cl//2 gas mixtures for these materials and TaSi//2 have been carried out.

Original languageEnglish
Pages (from-to)1037-1042
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number4
DOIs
Publication statusPublished - Jan 1 1983
EventProc of the Int Symp on Electron, Ion, and Photon Beams - Los Angeles, CA, USA
Duration: May 31 1983Jun 3 1983

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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