Abstract
The paper reports on the study of RIE-induced damage in the InAlAs/InGaAs material system. Demonstrated is the importance of the proper design of layer structure and depth of active region in particular for the occurrence of minimum or no damage during a RIE process. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs is faster than the rate of introduction of damage.
| Original language | English |
|---|---|
| Pages (from-to) | 391-394 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| Publication status | Published - Jan 1 1994 |
| Externally published | Yes |
| Event | Proceedings of the 6th International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA Duration: Mar 27 1994 → Mar 31 1994 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Fingerprint Dive into the research topics of 'Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures'. Together they form a unique fingerprint.
Cite this
Agarwala, S., Adesida, I., Caneau, C., & Bhat, R. (1994). Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 391-394.