Abstract
The paper reports on the study of RIE-induced damage in the InAlAs/InGaAs material system. Demonstrated is the importance of the proper design of layer structure and depth of active region in particular for the occurrence of minimum or no damage during a RIE process. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs is faster than the rate of introduction of damage.
| Original language | English |
|---|---|
| Pages (from-to) | 391-394 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| Publication status | Published - 1994 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures. / Agarwala, Sambhu; Adesida, Ilesanmi; Caneau, Catherine; Bhat, Rajaram.
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1994, p. 391-394.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures
AU - Agarwala, Sambhu
AU - Adesida, Ilesanmi
AU - Caneau, Catherine
AU - Bhat, Rajaram
PY - 1994
Y1 - 1994
N2 - The paper reports on the study of RIE-induced damage in the InAlAs/InGaAs material system. Demonstrated is the importance of the proper design of layer structure and depth of active region in particular for the occurrence of minimum or no damage during a RIE process. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs is faster than the rate of introduction of damage.
AB - The paper reports on the study of RIE-induced damage in the InAlAs/InGaAs material system. Demonstrated is the importance of the proper design of layer structure and depth of active region in particular for the occurrence of minimum or no damage during a RIE process. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs is faster than the rate of introduction of damage.
UR - http://www.scopus.com/inward/record.url?scp=0028264739&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0028264739&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0028264739
SP - 391
EP - 394
JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SN - 1092-8669
ER -