Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures

Sambhu Agarwala, Ilesanmi Adesida, Catherine Caneau, Rajaram Bhat

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

The paper reports on the study of RIE-induced damage in the InAlAs/InGaAs material system. Demonstrated is the importance of the proper design of layer structure and depth of active region in particular for the occurrence of minimum or no damage during a RIE process. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs is faster than the rate of introduction of damage.

Original languageEnglish
Pages (from-to)391-394
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - Jan 1 1994
Externally publishedYes
EventProceedings of the 6th International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA
Duration: Mar 27 1994Mar 31 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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