Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures

Sambhu Agarwala; Ilesanmi Adesida; Catherine Caneau; Rajaram Bhat

Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures

Sambhu Agarwala, Ilesanmi Adesida, Catherine Caneau, Rajaram Bhat

Research output: Contribution to journal › Conference article › peer-review

Abstract

The paper reports on the study of RIE-induced damage in the InAlAs/InGaAs material system. Demonstrated is the importance of the proper design of layer structure and depth of active region in particular for the occurrence of minimum or no damage during a RIE process. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs is faster than the rate of introduction of damage.

Original language	English
Pages (from-to)	391-394
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - Jan 1 1994
Externally published	Yes
Event	Proceedings of the 6th International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA Duration: Mar 27 1994 → Mar 31 1994

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures",

abstract = "The paper reports on the study of RIE-induced damage in the InAlAs/InGaAs material system. Demonstrated is the importance of the proper design of layer structure and depth of active region in particular for the occurrence of minimum or no damage during a RIE process. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs is faster than the rate of introduction of damage.",

author = "Sambhu Agarwala and Ilesanmi Adesida and Catherine Caneau and Rajaram Bhat",

year = "1994",

month = jan,

day = "1",

language = "English",

pages = "391--394",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 6th International Conference on Indium Phosphide and Related Materials ; Conference date: 27-03-1994 Through 31-03-1994",

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T1 - Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures

AU - Agarwala, Sambhu

AU - Adesida, Ilesanmi

AU - Caneau, Catherine

AU - Bhat, Rajaram

PY - 1994/1/1

Y1 - 1994/1/1

N2 - The paper reports on the study of RIE-induced damage in the InAlAs/InGaAs material system. Demonstrated is the importance of the proper design of layer structure and depth of active region in particular for the occurrence of minimum or no damage during a RIE process. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs is faster than the rate of introduction of damage.

AB - The paper reports on the study of RIE-induced damage in the InAlAs/InGaAs material system. Demonstrated is the importance of the proper design of layer structure and depth of active region in particular for the occurrence of minimum or no damage during a RIE process. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs is faster than the rate of introduction of damage.

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M3 - Conference article

AN - SCOPUS:0028264739

SP - 391

EP - 394

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

T2 - Proceedings of the 6th International Conference on Indium Phosphide and Related Materials

Y2 - 27 March 1994 through 31 March 1994

ER -