Abstract
The paper reports on the study of RIE-induced damage in the InAlAs/InGaAs material system. Demonstrated is the importance of the proper design of layer structure and depth of active region in particular for the occurrence of minimum or no damage during a RIE process. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs is faster than the rate of introduction of damage.
Original language | English |
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Pages (from-to) | 391-394 |
Number of pages | 4 |
Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
Publication status | Published - Jan 1 1994 |
Externally published | Yes |
Event | Proceedings of the 6th International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA Duration: Mar 27 1994 → Mar 31 1994 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering