Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures

Sambhu Agarwala, Ilesanmi Adesida, Catherine Caneau, Rajaram Bhat

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The paper reports on the study of RIE-induced damage in the InAlAs/InGaAs material system. Demonstrated is the importance of the proper design of layer structure and depth of active region in particular for the occurrence of minimum or no damage during a RIE process. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs is faster than the rate of introduction of damage.

Original languageEnglish
Pages (from-to)391-394
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

Reactive ion etching
Heterojunctions
etching
damage
Bias voltage
ions
occurrences
electric potential

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures. / Agarwala, Sambhu; Adesida, Ilesanmi; Caneau, Catherine; Bhat, Rajaram.

In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1994, p. 391-394.

Research output: Contribution to journalArticle

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