Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)

I. Adesida, A. Mahajan, E. Andideh, M. Asif Khan, D. T. Olsen, J. N. Kuznia

Research output: Contribution to journalArticle

168 Citations (Scopus)

Abstract

The reactive ion etching characteristics of gallium nitride (GaN) in silicon tetrachloride plasmas (SiCl4, 1:1/SiCl4:Ar, and 1:1/SiCl4:SiF4) in the pressure range between 20 and 80 mTorr have been investigated. For the pressure range investigated, etch rates are found to be essentially identical for the different gas mixtures and also invariant with pressure. However for all gas mixtures, etch rates increased monotonically with increasing plasma self-bias voltage exceeding 50 nm/min at 400 V. This is one of the highest etch rate ever reported for GaN. Smooth and anisotropic etch profiles are demonstrated for structures of submicrometer dimensions. The slight overcut observed in the etch profiles is attributed to the significant role of physical ion bombardment in the etching mechanism. Auger electron spectroscopy show that a wet etch in dilute HF is needed to clear the Si (in the form of SiOx) embedded in the near surface of GaN during etching thereby restoring etched surfaces to their virgin state.

Original languageEnglish
Pages (from-to)2777-2779
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number20
DOIs
Publication statusPublished - 1993
Externally publishedYes

Fingerprint

silicon tetrachloride
gallium nitrides
etching
gas mixtures
ions
profiles
Auger spectroscopy
electron spectroscopy
bombardment
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Adesida, I., Mahajan, A., Andideh, E., Khan, M. A., Olsen, D. T., & Kuznia, J. N. (1993). Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa) Applied Physics Letters, 63(20), 2777-2779. https://doi.org/10.1063/1.110331

Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa) . / Adesida, I.; Mahajan, A.; Andideh, E.; Khan, M. Asif; Olsen, D. T.; Kuznia, J. N.

In: Applied Physics Letters, Vol. 63, No. 20, 1993, p. 2777-2779.

Research output: Contribution to journalArticle

Adesida, I, Mahajan, A, Andideh, E, Khan, MA, Olsen, DT & Kuznia, JN 1993, 'Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa) ', Applied Physics Letters, vol. 63, no. 20, pp. 2777-2779. https://doi.org/10.1063/1.110331
Adesida, I. ; Mahajan, A. ; Andideh, E. ; Khan, M. Asif ; Olsen, D. T. ; Kuznia, J. N. / Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa) In: Applied Physics Letters. 1993 ; Vol. 63, No. 20. pp. 2777-2779.
@article{ceab50f619a04b409a6af67da6198f93,
title = "Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)",
abstract = "The reactive ion etching characteristics of gallium nitride (GaN) in silicon tetrachloride plasmas (SiCl4, 1:1/SiCl4:Ar, and 1:1/SiCl4:SiF4) in the pressure range between 20 and 80 mTorr have been investigated. For the pressure range investigated, etch rates are found to be essentially identical for the different gas mixtures and also invariant with pressure. However for all gas mixtures, etch rates increased monotonically with increasing plasma self-bias voltage exceeding 50 nm/min at 400 V. This is one of the highest etch rate ever reported for GaN. Smooth and anisotropic etch profiles are demonstrated for structures of submicrometer dimensions. The slight overcut observed in the etch profiles is attributed to the significant role of physical ion bombardment in the etching mechanism. Auger electron spectroscopy show that a wet etch in dilute HF is needed to clear the Si (in the form of SiOx) embedded in the near surface of GaN during etching thereby restoring etched surfaces to their virgin state.",
author = "I. Adesida and A. Mahajan and E. Andideh and Khan, {M. Asif} and Olsen, {D. T.} and Kuznia, {J. N.}",
year = "1993",
doi = "10.1063/1.110331",
language = "English",
volume = "63",
pages = "2777--2779",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

TY - JOUR

T1 - Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)

AU - Adesida, I.

AU - Mahajan, A.

AU - Andideh, E.

AU - Khan, M. Asif

AU - Olsen, D. T.

AU - Kuznia, J. N.

PY - 1993

Y1 - 1993

N2 - The reactive ion etching characteristics of gallium nitride (GaN) in silicon tetrachloride plasmas (SiCl4, 1:1/SiCl4:Ar, and 1:1/SiCl4:SiF4) in the pressure range between 20 and 80 mTorr have been investigated. For the pressure range investigated, etch rates are found to be essentially identical for the different gas mixtures and also invariant with pressure. However for all gas mixtures, etch rates increased monotonically with increasing plasma self-bias voltage exceeding 50 nm/min at 400 V. This is one of the highest etch rate ever reported for GaN. Smooth and anisotropic etch profiles are demonstrated for structures of submicrometer dimensions. The slight overcut observed in the etch profiles is attributed to the significant role of physical ion bombardment in the etching mechanism. Auger electron spectroscopy show that a wet etch in dilute HF is needed to clear the Si (in the form of SiOx) embedded in the near surface of GaN during etching thereby restoring etched surfaces to their virgin state.

AB - The reactive ion etching characteristics of gallium nitride (GaN) in silicon tetrachloride plasmas (SiCl4, 1:1/SiCl4:Ar, and 1:1/SiCl4:SiF4) in the pressure range between 20 and 80 mTorr have been investigated. For the pressure range investigated, etch rates are found to be essentially identical for the different gas mixtures and also invariant with pressure. However for all gas mixtures, etch rates increased monotonically with increasing plasma self-bias voltage exceeding 50 nm/min at 400 V. This is one of the highest etch rate ever reported for GaN. Smooth and anisotropic etch profiles are demonstrated for structures of submicrometer dimensions. The slight overcut observed in the etch profiles is attributed to the significant role of physical ion bombardment in the etching mechanism. Auger electron spectroscopy show that a wet etch in dilute HF is needed to clear the Si (in the form of SiOx) embedded in the near surface of GaN during etching thereby restoring etched surfaces to their virgin state.

UR - http://www.scopus.com/inward/record.url?scp=21544471895&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544471895&partnerID=8YFLogxK

U2 - 10.1063/1.110331

DO - 10.1063/1.110331

M3 - Article

VL - 63

SP - 2777

EP - 2779

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

ER -