Reactive ion etching of gallium nitride using hydrogen bromide plasmas

A. T. Ping, I. Adesida, M. Asif Khan, J. N. Kuznia, Y. F. Yang, E. S. Yang

Research output: Contribution to journalArticle

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Abstract

The characteristics of the reactive ion etching (RIE) of gallium nitride (GaN) have been investigated using HBr, 1:1 HBr:Ar, and 1:1 HBr:H2 plasmas. Etch rates were found to increase with plasma self-bias voltage for all gas mixtures exceeding 60 nm/min at -400V for pure HBr. Higher etch rates were obtained for pure HBr than for HBr mixtures with Ar and H2. Chamber pressure was also found to slightly affect etch rates for the pressure ranges investigated. The anisotropy of etched profiles was found to improve with increasing pressure. Smooth etched surfaces are also demonstrated.

Original languageEnglish
Pages (from-to)1895-1897
Number of pages3
JournalElectronics Letters
Volume30
Issue number22
DOIs
Publication statusPublished - Jan 1 1994
Externally publishedYes

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Gallium nitride
Reactive ion etching
Plasmas
Hydrogen
Bias voltage
Gas mixtures
Anisotropy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ping, A. T., Adesida, I., Asif Khan, M., Kuznia, J. N., Yang, Y. F., & Yang, E. S. (1994). Reactive ion etching of gallium nitride using hydrogen bromide plasmas. Electronics Letters, 30(22), 1895-1897. https://doi.org/10.1049/el:19941247

Reactive ion etching of gallium nitride using hydrogen bromide plasmas. / Ping, A. T.; Adesida, I.; Asif Khan, M.; Kuznia, J. N.; Yang, Y. F.; Yang, E. S.

In: Electronics Letters, Vol. 30, No. 22, 01.01.1994, p. 1895-1897.

Research output: Contribution to journalArticle

Ping, AT, Adesida, I, Asif Khan, M, Kuznia, JN, Yang, YF & Yang, ES 1994, 'Reactive ion etching of gallium nitride using hydrogen bromide plasmas', Electronics Letters, vol. 30, no. 22, pp. 1895-1897. https://doi.org/10.1049/el:19941247
Ping, A. T. ; Adesida, I. ; Asif Khan, M. ; Kuznia, J. N. ; Yang, Y. F. ; Yang, E. S. / Reactive ion etching of gallium nitride using hydrogen bromide plasmas. In: Electronics Letters. 1994 ; Vol. 30, No. 22. pp. 1895-1897.
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