REACTIVE ION ETCHING OF SILICON AND TANTALUM SILICIDE FOR SUBMICRON STRUCTURES.

Jianzhong Li Jianzhong, I. Adesida, E. D. Wolf

Research output: Contribution to journalArticle

Abstract

Reactive ion etching of silicon and tantalum silicides was investigated using mixtures of SiF//4/Cl//2. The electrode was covered with Teflon and kept at 60 degree C during processing. Moderate etch-rates and a high degree of anisotropy were obtained. The etch-rates and profiles obtained were observed to be dependent on the gas mixture ratios and were relatively independent of other process parameters. Sub-half-micron structures of Si and TaSi//2 were obtained. Submicron structures of TaSi//2/poly-Si with 4000 A line width and 1000 A space have been achieved in a single step process. Mechanisms of etching in this system are discussed.

Original languageEnglish
Pages (from-to)451-457
Number of pages7
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume6
Issue number5
Publication statusPublished - Sep 1985
Externally publishedYes

Fingerprint

Tantalum
Silicides
Reactive ion etching
Polytetrafluoroethylene
Silicon
tantalum
Polytetrafluoroethylenes
Polysilicon
Gas mixtures
Linewidth
Etching
Anisotropy
etching
Electrodes
silicides
teflon (trademark)
silicon
Processing
gas mixtures
ions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

REACTIVE ION ETCHING OF SILICON AND TANTALUM SILICIDE FOR SUBMICRON STRUCTURES. / Li Jianzhong, Jianzhong; Adesida, I.; Wolf, E. D.

In: Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, Vol. 6, No. 5, 09.1985, p. 451-457.

Research output: Contribution to journalArticle

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