Recessed 0.25 μm gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE

V. Kumar, W. Lu, F. A. Khan, R. Schwindt, E. Piner, I. Adesida

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Using inductively coupled plasma reactive ion etching (ICP-RIE), recessed 0.25 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) have been fabricated. A post-etch anneal eliminated the plasma-induced damage resulting in an improvement of the gate-drain breakdown voltage from -27 V for the as-etched to over -90 V for the annealed devices. The gate leakage current reduced from 91 to 4μA at Vgd = -25 V, after annealing. These devices exhibited maximum drain current density of 770 mA/mm, unity gain cutoff frequency (fT) of 48 GHz, and maximum frequency of oscillation (fmax) of 108 GHz.

Original languageEnglish
Pages (from-to)1483-1485
Number of pages3
JournalElectronics Letters
Volume37
Issue number24
DOIs
Publication statusPublished - Nov 22 2001
Externally publishedYes

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Plasma etching
Drain current
Reactive ion etching
Cutoff frequency
Inductively coupled plasma
High electron mobility transistors
Electric breakdown
Leakage currents
Current density
Annealing
Plasmas

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Recessed 0.25 μm gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE. / Kumar, V.; Lu, W.; Khan, F. A.; Schwindt, R.; Piner, E.; Adesida, I.

In: Electronics Letters, Vol. 37, No. 24, 22.11.2001, p. 1483-1485.

Research output: Contribution to journalArticle

Kumar, V. ; Lu, W. ; Khan, F. A. ; Schwindt, R. ; Piner, E. ; Adesida, I. / Recessed 0.25 μm gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE. In: Electronics Letters. 2001 ; Vol. 37, No. 24. pp. 1483-1485.
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