Recessed 70-nm gate-length AlGaN/GaN HEMTs fabricated using an Al2O3/SiNχ dielectric layer

Donghyun Kim, Vipan Kumar, Jaesun Lee, Minjun Yan, A. M. Dabiran, A. M. Wowchak, Peter P. Chow, Illesanmi Adesida

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