Recessed-gate GaN MESFET using ICP-RIE for high temperature microwave applications

C. Lee, W. Lu, E. Piner, I. Adesida

Research output: Contribution to conferencePaperpeer-review

3 Citations (Scopus)

Abstract

Recessed-gate GaN MESFETs were fabricated using inductively-coupled-plasma-reactive ion etching (ICP-RIE). As a result of the recessed gate process, the GaN MESFETs achieved the highest frequency results compared to those previously reported.

Original languageEnglish
Pages41-42
Number of pages2
Publication statusPublished - Jan 1 2000
Event58th Device Research Conference (58th DRC) - Denver, CO, USA
Duration: Jun 19 2000Jun 21 2000

Conference

Conference58th Device Research Conference (58th DRC)
CityDenver, CO, USA
Period6/19/006/21/00

ASJC Scopus subject areas

  • Engineering(all)

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