Recessed-gate GaN MESFET using ICP-RIE for high temperature microwave applications

C. Lee; W. Lu; E. Piner; I. Adesida

Recessed-gate GaN MESFET using ICP-RIE for high temperature microwave applications

C. Lee, W. Lu, E. Piner, I. Adesida

Nazarbayev University

Research output: Contribution to conference › Paper › peer-review

3 Citations (Scopus)

Abstract

Recessed-gate GaN MESFETs were fabricated using inductively-coupled-plasma-reactive ion etching (ICP-RIE). As a result of the recessed gate process, the GaN MESFETs achieved the highest frequency results compared to those previously reported.

Original language	English
Pages	41-42
Number of pages	2
Publication status	Published - Jan 1 2000
Event	58th Device Research Conference (58th DRC) - Denver, CO, USA Duration: Jun 19 2000 → Jun 21 2000

Conference

Conference	58th Device Research Conference (58th DRC)
City	Denver, CO, USA
Period	6/19/00 → 6/21/00

ASJC Scopus subject areas

Engineering(all)

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Cite this

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title = "Recessed-gate GaN MESFET using ICP-RIE for high temperature microwave applications",

abstract = "Recessed-gate GaN MESFETs were fabricated using inductively-coupled-plasma-reactive ion etching (ICP-RIE). As a result of the recessed gate process, the GaN MESFETs achieved the highest frequency results compared to those previously reported.",

author = "C. Lee and W. Lu and E. Piner and I. Adesida",

year = "2000",

month = jan,

day = "1",

language = "English",

pages = "41--42",

note = "58th Device Research Conference (58th DRC) ; Conference date: 19-06-2000 Through 21-06-2000",

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TY - CONF

T1 - Recessed-gate GaN MESFET using ICP-RIE for high temperature microwave applications

AU - Lee, C.

AU - Lu, W.

AU - Piner, E.

AU - Adesida, I.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Recessed-gate GaN MESFETs were fabricated using inductively-coupled-plasma-reactive ion etching (ICP-RIE). As a result of the recessed gate process, the GaN MESFETs achieved the highest frequency results compared to those previously reported.

AB - Recessed-gate GaN MESFETs were fabricated using inductively-coupled-plasma-reactive ion etching (ICP-RIE). As a result of the recessed gate process, the GaN MESFETs achieved the highest frequency results compared to those previously reported.

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M3 - Paper

AN - SCOPUS:0033645125

SP - 41

EP - 42

T2 - 58th Device Research Conference (58th DRC)

Y2 - 19 June 2000 through 21 June 2000

ER -