RESIST EXPOSURE WITH LIGHT IONS.

I. Adesida, C. Anderson, E. D. Wolf

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Radiation yields or G//s-values in polymethylmethacrylate (PMMA), which are the number of chain scissions per 100 ev of absorbed energy, due to irradiation with electrons, protons, and helium, lithium, beryllium, and boron ions have been measured. G//s values for protons and electrons are the same at approximately equals 0. 75, while those of helium, lithium, beryllium, and boron ions are 0. 45, 0. 44, 0. 40, and 0. 45, respectively. Initial results on sensitivities and mean pathlengths of ions in PMMA obtained from solubility studies are also presented.

Original languageEnglish
Pages (from-to)1182-1185
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number4
DOIs
Publication statusPublished - Oct 1983
Externally publishedYes

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Beryllium
Helium
Boron
Ions
Protons
Lithium
Electrons
Solubility
Irradiation
Radiation

ASJC Scopus subject areas

  • Engineering(all)

Cite this

RESIST EXPOSURE WITH LIGHT IONS. / Adesida, I.; Anderson, C.; Wolf, E. D.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 1, No. 4, 10.1983, p. 1182-1185.

Research output: Contribution to journalArticle

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