Ring oscillator using InAlAs/InGaAs/InP enhancement/depletion-mode high electron mobility transistor direct-coupled FET logic inverters

G. Cueva, A. Mahajan, P. Fay, M. Arafa, I. Adesida

Research output: Contribution to journalConference article

Abstract

The monolithic integration of enhancement- and depletion-mode (E/D) 0.5m gate-length HEMTs on lattice-matched InP has been demonstrated by the fabrication of a ring oscillator. The circuit consists of 28 devices. Control over threshold voltage for both the E-HEMTs and D-HEMTs in this process is excellent. E-HEMT threshold voltage is 195 mV with a 9 mV standard deviation and D-HEMT threshold voltage is -365 mV with a 19 mV standard deviation. The inverters that make up the oscillator exhibit a 450 mV static output voltage swing and noise margins of 145 mV at a supply voltage of 0.6 V. The ring oscillator showed minimum propagation delay of 20.66 ps, a minimum power consumption/stage of 120 μW, and a minimum power-delay product of 2.65 fJ/stage.

Original languageEnglish
Pages (from-to)157-160
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - Jan 1 1997
EventProceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA
Duration: May 11 1997May 15 1997

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this