Ring oscillator using InAlAs/InGaAs/InP enhancement/depletion-mode high electron mobility transistor direct-coupled FET logic inverters

G. Cueva, A. Mahajan, P. Fay, M. Arafa, I. Adesida

Research output: Contribution to journalArticle

Abstract

The monolithic integration of enhancement- and depletion-mode (E/D) 0.5m gate-length HEMTs on lattice-matched InP has been demonstrated by the fabrication of a ring oscillator. The circuit consists of 28 devices. Control over threshold voltage for both the E-HEMTs and D-HEMTs in this process is excellent. E-HEMT threshold voltage is 195 mV with a 9 mV standard deviation and D-HEMT threshold voltage is -365 mV with a 19 mV standard deviation. The inverters that make up the oscillator exhibit a 450 mV static output voltage swing and noise margins of 145 mV at a supply voltage of 0.6 V. The ring oscillator showed minimum propagation delay of 20.66 ps, a minimum power consumption/stage of 120 μW, and a minimum power-delay product of 2.65 fJ/stage.

Original languageEnglish
Pages (from-to)157-160
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1997
Externally publishedYes

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inverters
High electron mobility transistors
Field effect transistors
high electron mobility transistors
logic
depletion
field effect transistors
oscillators
Threshold voltage
augmentation
threshold voltage
rings
standard deviation
Electric potential
electric potential
margins
Electric power utilization
Fabrication
fabrication
propagation

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "The monolithic integration of enhancement- and depletion-mode (E/D) 0.5m gate-length HEMTs on lattice-matched InP has been demonstrated by the fabrication of a ring oscillator. The circuit consists of 28 devices. Control over threshold voltage for both the E-HEMTs and D-HEMTs in this process is excellent. E-HEMT threshold voltage is 195 mV with a 9 mV standard deviation and D-HEMT threshold voltage is -365 mV with a 19 mV standard deviation. The inverters that make up the oscillator exhibit a 450 mV static output voltage swing and noise margins of 145 mV at a supply voltage of 0.6 V. The ring oscillator showed minimum propagation delay of 20.66 ps, a minimum power consumption/stage of 120 μW, and a minimum power-delay product of 2.65 fJ/stage.",
author = "G. Cueva and A. Mahajan and P. Fay and M. Arafa and I. Adesida",
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journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
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T1 - Ring oscillator using InAlAs/InGaAs/InP enhancement/depletion-mode high electron mobility transistor direct-coupled FET logic inverters

AU - Cueva, G.

AU - Mahajan, A.

AU - Fay, P.

AU - Arafa, M.

AU - Adesida, I.

PY - 1997

Y1 - 1997

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AB - The monolithic integration of enhancement- and depletion-mode (E/D) 0.5m gate-length HEMTs on lattice-matched InP has been demonstrated by the fabrication of a ring oscillator. The circuit consists of 28 devices. Control over threshold voltage for both the E-HEMTs and D-HEMTs in this process is excellent. E-HEMT threshold voltage is 195 mV with a 9 mV standard deviation and D-HEMT threshold voltage is -365 mV with a 19 mV standard deviation. The inverters that make up the oscillator exhibit a 450 mV static output voltage swing and noise margins of 145 mV at a supply voltage of 0.6 V. The ring oscillator showed minimum propagation delay of 20.66 ps, a minimum power consumption/stage of 120 μW, and a minimum power-delay product of 2.65 fJ/stage.

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