Abstract
The chemical modification of n- and p-type hydrogen-passivated Si(100) surfaces by a scanning tunneling microscope (STM) is reported. The modified areas have been examined with STM, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Comparison of these characterization techniques indicates the features are both chemical and topographic in nature and are the result of local oxidation of the substrate. In addition, pattern transfer for the defined regions has been demonstrated with both thermal oxidation and HBr reactive-ion etching.
| Original language | English |
|---|---|
| Pages (from-to) | 7545-7549 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 75 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1994 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Scanning tunneling microscope stimulated oxidation of silicon (100) surfaces. / Fay, P.; Brockenbrough, R. T.; Abeln, G.; Scott, P.; Agarwala, S.; Adesida, I.; Lyding, J. W.
In: Journal of Applied Physics, Vol. 75, No. 11, 1994, p. 7545-7549.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Scanning tunneling microscope stimulated oxidation of silicon (100) surfaces
AU - Fay, P.
AU - Brockenbrough, R. T.
AU - Abeln, G.
AU - Scott, P.
AU - Agarwala, S.
AU - Adesida, I.
AU - Lyding, J. W.
PY - 1994
Y1 - 1994
N2 - The chemical modification of n- and p-type hydrogen-passivated Si(100) surfaces by a scanning tunneling microscope (STM) is reported. The modified areas have been examined with STM, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Comparison of these characterization techniques indicates the features are both chemical and topographic in nature and are the result of local oxidation of the substrate. In addition, pattern transfer for the defined regions has been demonstrated with both thermal oxidation and HBr reactive-ion etching.
AB - The chemical modification of n- and p-type hydrogen-passivated Si(100) surfaces by a scanning tunneling microscope (STM) is reported. The modified areas have been examined with STM, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Comparison of these characterization techniques indicates the features are both chemical and topographic in nature and are the result of local oxidation of the substrate. In addition, pattern transfer for the defined regions has been demonstrated with both thermal oxidation and HBr reactive-ion etching.
UR - http://www.scopus.com/inward/record.url?scp=0343317060&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0343317060&partnerID=8YFLogxK
U2 - 10.1063/1.356629
DO - 10.1063/1.356629
M3 - Article
VL - 75
SP - 7545
EP - 7549
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 11
ER -