TY - JOUR
T1 - Scanning tunneling microscope stimulated oxidation of silicon (100) surfaces
AU - Fay, P.
AU - Brockenbrough, R. T.
AU - Abeln, G.
AU - Scott, P.
AU - Agarwala, S.
AU - Adesida, I.
AU - Lyding, J. W.
PY - 1994/12/1
Y1 - 1994/12/1
N2 - The chemical modification of n- and p-type hydrogen-passivated Si(100) surfaces by a scanning tunneling microscope (STM) is reported. The modified areas have been examined with STM, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Comparison of these characterization techniques indicates the features are both chemical and topographic in nature and are the result of local oxidation of the substrate. In addition, pattern transfer for the defined regions has been demonstrated with both thermal oxidation and HBr reactive-ion etching.
AB - The chemical modification of n- and p-type hydrogen-passivated Si(100) surfaces by a scanning tunneling microscope (STM) is reported. The modified areas have been examined with STM, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Comparison of these characterization techniques indicates the features are both chemical and topographic in nature and are the result of local oxidation of the substrate. In addition, pattern transfer for the defined regions has been demonstrated with both thermal oxidation and HBr reactive-ion etching.
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U2 - 10.1063/1.356629
DO - 10.1063/1.356629
M3 - Article
AN - SCOPUS:0343317060
VL - 75
SP - 7545
EP - 7549
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 11
ER -