Scanning tunneling microscope stimulated oxidation of silicon (100) surfaces

P. Fay; R. T. Brockenbrough; G. Abeln; P. Scott; S. Agarwala; I. Adesida; J. W. Lyding

doi:10.1063/1.356629

Scanning tunneling microscope stimulated oxidation of silicon (100) surfaces

P. Fay, R. T. Brockenbrough, G. Abeln, P. Scott, S. Agarwala, I. Adesida, J. W. Lyding

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The chemical modification of n- and p-type hydrogen-passivated Si(100) surfaces by a scanning tunneling microscope (STM) is reported. The modified areas have been examined with STM, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Comparison of these characterization techniques indicates the features are both chemical and topographic in nature and are the result of local oxidation of the substrate. In addition, pattern transfer for the defined regions has been demonstrated with both thermal oxidation and HBr reactive-ion etching.

Original language	English
Pages (from-to)	7545-7549
Number of pages	5
Journal	Journal of Applied Physics
Volume	75
Issue number	11
DOIs	https://doi.org/10.1063/1.356629
Publication status	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy(all)

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AU - Fay, P.

AU - Brockenbrough, R. T.

AU - Abeln, G.

AU - Scott, P.

AU - Agarwala, S.

AU - Adesida, I.

AU - Lyding, J. W.

PY - 1994

Y1 - 1994

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AB - The chemical modification of n- and p-type hydrogen-passivated Si(100) surfaces by a scanning tunneling microscope (STM) is reported. The modified areas have been examined with STM, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Comparison of these characterization techniques indicates the features are both chemical and topographic in nature and are the result of local oxidation of the substrate. In addition, pattern transfer for the defined regions has been demonstrated with both thermal oxidation and HBr reactive-ion etching.

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SN - 0021-8979

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Scanning tunneling microscope stimulated oxidation of silicon (100) surfaces

Abstract

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