Abstract
The chemical modification of n- and p-type hydrogen-passivated Si(100) surfaces by a scanning tunneling microscope (STM) is reported. The modified areas have been examined with STM, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Comparison of these characterization techniques indicates the features are both chemical and topographic in nature and are the result of local oxidation of the substrate. In addition, pattern transfer for the defined regions has been demonstrated with both thermal oxidation and HBr reactive-ion etching.
| Original language | English |
|---|---|
| Pages (from-to) | 7545-7549 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 75 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Dec 1 1994 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Cite this
Fay, P., Brockenbrough, R. T., Abeln, G., Scott, P., Agarwala, S., Adesida, I., & Lyding, J. W. (1994). Scanning tunneling microscope stimulated oxidation of silicon (100) surfaces. Journal of Applied Physics, 75(11), 7545-7549. https://doi.org/10.1063/1.356629