Schottky barrier characteristics and interfacial reactions of Ti on n- In0.52 Al0.48 As

Liang Wang, Ilesanmi Adesida

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Schottky barrier heights (φB) and ideality factors (n) of TiPtAu diodes on n-InAlAs were characterized. Transmission electron microscopy (TEM) investigations were utilized to correlate the electrical performance with interfacial reactions. The enhancement of φB and increase in n were obtained with increasing annealing temperatures. TEM studies confirmed that amorphous layers were formed at the TiInAlAs interface at short annealing times, while prolonged annealing resulted in the crystallization of TiAs, defective layer formation, and Kirkendall void formation. Such aggressive reactions after prolonged annealing extended deep into the InAlAs and may affect the active region of InAlAsInGaAs -based transistors. The activation energy for this reaction was calculated to be 1.5±0.1 eV.

Original languageEnglish
Article number022110
JournalApplied Physics Letters
Volume91
Issue number2
DOIs
Publication statusPublished - 2007
Externally publishedYes

Fingerprint

annealing
transmission electron microscopy
voids
transistors
diodes
crystallization
activation energy
augmentation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Schottky barrier characteristics and interfacial reactions of Ti on n- In0.52 Al0.48 As. / Wang, Liang; Adesida, Ilesanmi.

In: Applied Physics Letters, Vol. 91, No. 2, 022110, 2007.

Research output: Contribution to journalArticle

@article{d6fa075fbf4e4d6a819b688bc8f5cd11,
title = "Schottky barrier characteristics and interfacial reactions of Ti on n- In0.52 Al0.48 As",
abstract = "Schottky barrier heights (φB) and ideality factors (n) of TiPtAu diodes on n-InAlAs were characterized. Transmission electron microscopy (TEM) investigations were utilized to correlate the electrical performance with interfacial reactions. The enhancement of φB and increase in n were obtained with increasing annealing temperatures. TEM studies confirmed that amorphous layers were formed at the TiInAlAs interface at short annealing times, while prolonged annealing resulted in the crystallization of TiAs, defective layer formation, and Kirkendall void formation. Such aggressive reactions after prolonged annealing extended deep into the InAlAs and may affect the active region of InAlAsInGaAs -based transistors. The activation energy for this reaction was calculated to be 1.5±0.1 eV.",
author = "Liang Wang and Ilesanmi Adesida",
year = "2007",
doi = "10.1063/1.2756313",
language = "English",
volume = "91",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Schottky barrier characteristics and interfacial reactions of Ti on n- In0.52 Al0.48 As

AU - Wang, Liang

AU - Adesida, Ilesanmi

PY - 2007

Y1 - 2007

N2 - Schottky barrier heights (φB) and ideality factors (n) of TiPtAu diodes on n-InAlAs were characterized. Transmission electron microscopy (TEM) investigations were utilized to correlate the electrical performance with interfacial reactions. The enhancement of φB and increase in n were obtained with increasing annealing temperatures. TEM studies confirmed that amorphous layers were formed at the TiInAlAs interface at short annealing times, while prolonged annealing resulted in the crystallization of TiAs, defective layer formation, and Kirkendall void formation. Such aggressive reactions after prolonged annealing extended deep into the InAlAs and may affect the active region of InAlAsInGaAs -based transistors. The activation energy for this reaction was calculated to be 1.5±0.1 eV.

AB - Schottky barrier heights (φB) and ideality factors (n) of TiPtAu diodes on n-InAlAs were characterized. Transmission electron microscopy (TEM) investigations were utilized to correlate the electrical performance with interfacial reactions. The enhancement of φB and increase in n were obtained with increasing annealing temperatures. TEM studies confirmed that amorphous layers were formed at the TiInAlAs interface at short annealing times, while prolonged annealing resulted in the crystallization of TiAs, defective layer formation, and Kirkendall void formation. Such aggressive reactions after prolonged annealing extended deep into the InAlAs and may affect the active region of InAlAsInGaAs -based transistors. The activation energy for this reaction was calculated to be 1.5±0.1 eV.

UR - http://www.scopus.com/inward/record.url?scp=34547207586&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547207586&partnerID=8YFLogxK

U2 - 10.1063/1.2756313

DO - 10.1063/1.2756313

M3 - Article

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 022110

ER -