Schottky barrier heights of Ni, Pt, Pd, and Au on n-type GaN

A. C. Schmitz, A. T. Ping, M. Asif Khan, I. Adesida

Research output: Contribution to journalConference articlepeer-review

20 Citations (Scopus)

Abstract

Schottky barrier heights of Ni, Pt, Pd, and Au on n-type GaN were measured using current-voltage and capacitance-voltage techniques. Measurements from the I-V technique yielded barrier heights of 0.95, 1.01, 0.94, and 0.87 eV for Ni, Pt, Pd, and Au, respectively. Barrier heights of 1.13, 1.16, 1.07, and 0.98 eV, for Ni, Pt, Pd, and Au, respectively, were obtained using C-V measurements.

Original languageEnglish
Pages (from-to)831-835
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume395
Publication statusPublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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