Abstract
Schottky barrier heights of Ni, Pt, Pd, and Au on n-type GaN were measured using current-voltage and capacitance-voltage techniques. Measurements from the I-V technique yielded barrier heights of 0.95, 1.01, 0.94, and 0.87 eV for Ni, Pt, Pd, and Au, respectively. Barrier heights of 1.13, 1.16, 1.07, and 0.98 eV, for Ni, Pt, Pd, and Au, respectively, were obtained using C-V measurements.
Original language | English |
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Pages (from-to) | 831-835 |
Number of pages | 5 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 395 |
Publication status | Published - 1996 |
Event | Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering