Selective wet etching for InGaAs/InAlAs/InP heterostructure field-effect transistors

M. Tong, A. A. Ketterson, K. Nummila, I. Adesida, L. Aina, M. Mattingly

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The fabrication procedure of heterostructure field-effect transistors (HFETs) such as modulation-doped field-effect transistors (MODFETs) typically includes two important etching steps. The first is the mesa etch for device isolation, and the second is the gate recess where the cap layer is removed to expose the underlying layer for the Schottky gate formation. The gate recess is also used to achieve the desired drain saturation current. Both etching steps require good etch depth control, although, the control needed for the mesa process is not as critical as that for the gate recess. However, the mesa should not be overetched since metal-gate discontinuity due to breakage can occur at the mesa edge, especially for devices with nanometerdimension gate lengths. It has been shown by Tiwari (1) that excellent etch depth control is imperative in the gate recess process for short-gate-length MODFETs in order to achieve uniform threshold voltages which in turn is essential to the realization of high performance integrated circuits. Therefore, a good selectivity in the etching of the cap layer with respect to the underlying high band-gap layer is required in the fabrication of HFETs.

Original languageEnglish
Title of host publicationLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages298-301
Number of pages4
ISBN (Electronic)0780305221, 9780780305229
DOIs
Publication statusPublished - Jan 1 1992
Externally publishedYes
EventLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 - Newport, United States
Duration: Apr 21 1992Apr 24 1992

Publication series

NameLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

Conference

ConferenceLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
CountryUnited States
CityNewport
Period4/21/924/24/92

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electronic, Optical and Magnetic Materials
  • Computer Networks and Communications
  • Atomic and Molecular Physics, and Optics

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