Self-aligned AlGaN/GaN high electron mobility transistors

V. Kumar, D. H. Kim, A. Basu, I. Adesida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication65th DRC Device Research Conference
Pages39-40
Number of pages2
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event65th DRC Device Research Conference - South Bend, India
Duration: Jun 18 2007Jun 20 2007

Other

Other65th DRC Device Research Conference
CountryIndia
CitySouth Bend
Period6/18/076/20/07

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High electron mobility transistors

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Kumar, V., Kim, D. H., Basu, A., & Adesida, I. (2007). Self-aligned AlGaN/GaN high electron mobility transistors. In 65th DRC Device Research Conference (pp. 39-40). [4373641] https://doi.org/10.1109/DRC.2007.4373641

Self-aligned AlGaN/GaN high electron mobility transistors. / Kumar, V.; Kim, D. H.; Basu, A.; Adesida, I.

65th DRC Device Research Conference. 2007. p. 39-40 4373641.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kumar, V, Kim, DH, Basu, A & Adesida, I 2007, Self-aligned AlGaN/GaN high electron mobility transistors. in 65th DRC Device Research Conference., 4373641, pp. 39-40, 65th DRC Device Research Conference, South Bend, India, 6/18/07. https://doi.org/10.1109/DRC.2007.4373641
Kumar V, Kim DH, Basu A, Adesida I. Self-aligned AlGaN/GaN high electron mobility transistors. In 65th DRC Device Research Conference. 2007. p. 39-40. 4373641 https://doi.org/10.1109/DRC.2007.4373641
Kumar, V. ; Kim, D. H. ; Basu, A. ; Adesida, I. / Self-aligned AlGaN/GaN high electron mobility transistors. 65th DRC Device Research Conference. 2007. pp. 39-40
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