Self-aligned AlGaN/GaN high electron mobility transistors

V. Kumar; D. H. Kim; A. Basu; I. Adesida

doi:10.1109/DRC.2007.4373641

Self-aligned AlGaN/GaN high electron mobility transistors

V. Kumar, D. H. Kim, A. Basu, I. Adesida

Nazarbayev University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	65th DRC Device Research Conference
Pages	39-40
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2007.4373641
Publication status	Published - Dec 1 2007
Event	65th DRC Device Research Conference - South Bend, India Duration: Jun 18 2007 → Jun 20 2007

Publication series

Name	65th DRC Device Research Conference

Other

Other	65th DRC Device Research Conference
Country	India
City	South Bend
Period	6/18/07 → 6/20/07

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2007.4373641

Cite this

@inproceedings{2a067238c2c244ae9263e57de15b6cf4,

title = "Self-aligned AlGaN/GaN high electron mobility transistors",

author = "V. Kumar and Kim, {D. H.} and A. Basu and I. Adesida",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/DRC.2007.4373641",

language = "English",

isbn = "1424411025",

series = "65th DRC Device Research Conference",

pages = "39--40",

booktitle = "65th DRC Device Research Conference",

note = "65th DRC Device Research Conference ; Conference date: 18-06-2007 Through 20-06-2007",

}

TY - GEN

T1 - Self-aligned AlGaN/GaN high electron mobility transistors

AU - Kumar, V.

AU - Kim, D. H.

AU - Basu, A.

AU - Adesida, I.

PY - 2007/12/1

Y1 - 2007/12/1

UR - http://www.scopus.com/inward/record.url?scp=47249130910&partnerID=8YFLogxK

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U2 - 10.1109/DRC.2007.4373641

DO - 10.1109/DRC.2007.4373641

M3 - Conference contribution

AN - SCOPUS:47249130910

SN - 1424411025

SN - 9781424411023

T3 - 65th DRC Device Research Conference

SP - 39

EP - 40

BT - 65th DRC Device Research Conference

T2 - 65th DRC Device Research Conference

Y2 - 18 June 2007 through 20 June 2007

ER -

Self-aligned AlGaN/GaN high electron mobility transistors

Publication series

Other

ASJC Scopus subject areas

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