| Original language | English |
|---|---|
| Title of host publication | 65th DRC Device Research Conference |
| Pages | 39-40 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2007 |
| Externally published | Yes |
| Event | 65th DRC Device Research Conference - South Bend, India Duration: Jun 18 2007 → Jun 20 2007 |
Other
| Other | 65th DRC Device Research Conference |
|---|---|
| Country | India |
| City | South Bend |
| Period | 6/18/07 → 6/20/07 |
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High electron mobility transistors
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
Cite this
Kumar, V., Kim, D. H., Basu, A., & Adesida, I. (2007). Self-aligned AlGaN/GaN high electron mobility transistors. In 65th DRC Device Research Conference (pp. 39-40). [4373641] https://doi.org/10.1109/DRC.2007.4373641
Self-aligned AlGaN/GaN high electron mobility transistors. / Kumar, V.; Kim, D. H.; Basu, A.; Adesida, I.
65th DRC Device Research Conference. 2007. p. 39-40 4373641.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
Kumar, V, Kim, DH, Basu, A & Adesida, I 2007, Self-aligned AlGaN/GaN high electron mobility transistors. in 65th DRC Device Research Conference., 4373641, pp. 39-40, 65th DRC Device Research Conference, South Bend, India, 6/18/07. https://doi.org/10.1109/DRC.2007.4373641
Kumar V, Kim DH, Basu A, Adesida I. Self-aligned AlGaN/GaN high electron mobility transistors. In 65th DRC Device Research Conference. 2007. p. 39-40. 4373641 https://doi.org/10.1109/DRC.2007.4373641
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