Self-assembled monolayers of Lewis bases

effects on surface and interfacial electronic properties in III-V optical semiconductors

J. F. Dorsten, James E. Maslar, Y. Zhang, T. B. Rauchfuss, Paul W. Bohn, S. Agarwala, Ilesanmi Adesida, C. Caneau, Rajaram J. Bhat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The nature and disposition of surface states can have a dramatic effect on the near-surface electronic properties in semiconductor heterostructures. In particular the lack of a well-defined surface oxide in III-V materials means that surface band bending can cause surface recombination velocities to be up to 103 larger than in Si-based materials. Raman scattering by coupled longitudinal optic phonons and 2D electron gas electrons in In 0.52Al0.48AsIn0.53Ga0.47As δ-doped heterostructures is used to demonstrate the extreme sensitivity to surface states. The two highest frequency modes, of the three coupled electron-phonon modes expected in this system, were observed, with the L+ mode being identified for the first time in InGaAs-based systems. The large dispersion of this mode makes it a particularly sensitive probe for changes in such properties as carrier concentration and subband energy. For structures with higher carrier concentrations coupling of the longitudinal optic phonon to multiple electron intersubband transitions is resolved. In order to passivate native surface states organic thiols are being investigated. Measurements on bulk GaAs indicate a change in the surface depletion region thickness, within the abrupt junction model, of up to 50 angstrom (ca. 30%). Changes in carrier scattering times up to 50% have also been observed.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsHai-Lung Dai, Steven J. Sibener
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages51-58
Number of pages8
Volume2125
ISBN (Print)0819414182
Publication statusPublished - 1994
Externally publishedYes
EventLaser Techniques for Surface Science - Los Angeles, CA, USA
Duration: Jan 27 1994Jan 29 1994

Other

OtherLaser Techniques for Surface Science
CityLos Angeles, CA, USA
Period1/27/941/29/94

Fingerprint

Lewis base
Self assembled monolayers
Electronic properties
Semiconductor materials
Surface states
electronics
Carrier concentration
Heterojunctions
Optics
Electron gas
Electrons
Phonons
Electron transitions
optics
Raman scattering
electron transitions
Scattering
thiols
Oxides
electron gas

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Dorsten, J. F., Maslar, J. E., Zhang, Y., Rauchfuss, T. B., Bohn, P. W., Agarwala, S., ... Bhat, R. J. (1994). Self-assembled monolayers of Lewis bases: effects on surface and interfacial electronic properties in III-V optical semiconductors. In H-L. Dai, & S. J. Sibener (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2125, pp. 51-58). Society of Photo-Optical Instrumentation Engineers.

Self-assembled monolayers of Lewis bases : effects on surface and interfacial electronic properties in III-V optical semiconductors. / Dorsten, J. F.; Maslar, James E.; Zhang, Y.; Rauchfuss, T. B.; Bohn, Paul W.; Agarwala, S.; Adesida, Ilesanmi; Caneau, C.; Bhat, Rajaram J.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Hai-Lung Dai; Steven J. Sibener. Vol. 2125 Society of Photo-Optical Instrumentation Engineers, 1994. p. 51-58.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dorsten, JF, Maslar, JE, Zhang, Y, Rauchfuss, TB, Bohn, PW, Agarwala, S, Adesida, I, Caneau, C & Bhat, RJ 1994, Self-assembled monolayers of Lewis bases: effects on surface and interfacial electronic properties in III-V optical semiconductors. in H-L Dai & SJ Sibener (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 2125, Society of Photo-Optical Instrumentation Engineers, pp. 51-58, Laser Techniques for Surface Science, Los Angeles, CA, USA, 1/27/94.
Dorsten JF, Maslar JE, Zhang Y, Rauchfuss TB, Bohn PW, Agarwala S et al. Self-assembled monolayers of Lewis bases: effects on surface and interfacial electronic properties in III-V optical semiconductors. In Dai H-L, Sibener SJ, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2125. Society of Photo-Optical Instrumentation Engineers. 1994. p. 51-58
Dorsten, J. F. ; Maslar, James E. ; Zhang, Y. ; Rauchfuss, T. B. ; Bohn, Paul W. ; Agarwala, S. ; Adesida, Ilesanmi ; Caneau, C. ; Bhat, Rajaram J. / Self-assembled monolayers of Lewis bases : effects on surface and interfacial electronic properties in III-V optical semiconductors. Proceedings of SPIE - The International Society for Optical Engineering. editor / Hai-Lung Dai ; Steven J. Sibener. Vol. 2125 Society of Photo-Optical Instrumentation Engineers, 1994. pp. 51-58
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