Self-developing photoresist using a vacuum ultraviolet F2 excimer laser exposure

D. Henderson, J. C. White, H. G. Craighead, I. Adesida

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Abstract

An F2 excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography with the self-developing resist nitrocellulose. Ablative development of the nitrocellulose was observed for 157-nm energy densities greater than 0.025 J/cm2. Stencil masks fabricated using electron beam lithography were used for contact photolithography, and mask features to 200 nm were reproduced. These are the smallest features yet reproduced from a mask with an optical, self-developing resist technology.

Original languageEnglish
Pages (from-to)900-902
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number9
DOIs
Publication statusPublished - Dec 1 1985

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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