Self-developing photoresist using a vacuum ultraviolet F2 excimer laser exposure

D. Henderson, J. C. White, H. G. Craighead, I. Adesida

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

An F2 excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography with the self-developing resist nitrocellulose. Ablative development of the nitrocellulose was observed for 157-nm energy densities greater than 0.025 J/cm2. Stencil masks fabricated using electron beam lithography were used for contact photolithography, and mask features to 200 nm were reproduced. These are the smallest features yet reproduced from a mask with an optical, self-developing resist technology.

Original languageEnglish
Pages (from-to)900-902
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number9
DOIs
Publication statusPublished - 1985
Externally publishedYes

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ultraviolet lasers
photoresists
excimer lasers
cellulose nitrate
masks
photolithography
vacuum
lithography
flux density
electron beams
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Self-developing photoresist using a vacuum ultraviolet F2 excimer laser exposure. / Henderson, D.; White, J. C.; Craighead, H. G.; Adesida, I.

In: Applied Physics Letters, Vol. 46, No. 9, 1985, p. 900-902.

Research output: Contribution to journalArticle

Henderson, D. ; White, J. C. ; Craighead, H. G. ; Adesida, I. / Self-developing photoresist using a vacuum ultraviolet F2 excimer laser exposure. In: Applied Physics Letters. 1985 ; Vol. 46, No. 9. pp. 900-902.
@article{edd7bb8e6aa84f37903d70688f521821,
title = "Self-developing photoresist using a vacuum ultraviolet F2 excimer laser exposure",
abstract = "An F2 excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography with the self-developing resist nitrocellulose. Ablative development of the nitrocellulose was observed for 157-nm energy densities greater than 0.025 J/cm2. Stencil masks fabricated using electron beam lithography were used for contact photolithography, and mask features to 200 nm were reproduced. These are the smallest features yet reproduced from a mask with an optical, self-developing resist technology.",
author = "D. Henderson and White, {J. C.} and Craighead, {H. G.} and I. Adesida",
year = "1985",
doi = "10.1063/1.95881",
language = "English",
volume = "46",
pages = "900--902",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Self-developing photoresist using a vacuum ultraviolet F2 excimer laser exposure

AU - Henderson, D.

AU - White, J. C.

AU - Craighead, H. G.

AU - Adesida, I.

PY - 1985

Y1 - 1985

N2 - An F2 excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography with the self-developing resist nitrocellulose. Ablative development of the nitrocellulose was observed for 157-nm energy densities greater than 0.025 J/cm2. Stencil masks fabricated using electron beam lithography were used for contact photolithography, and mask features to 200 nm were reproduced. These are the smallest features yet reproduced from a mask with an optical, self-developing resist technology.

AB - An F2 excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography with the self-developing resist nitrocellulose. Ablative development of the nitrocellulose was observed for 157-nm energy densities greater than 0.025 J/cm2. Stencil masks fabricated using electron beam lithography were used for contact photolithography, and mask features to 200 nm were reproduced. These are the smallest features yet reproduced from a mask with an optical, self-developing resist technology.

UR - http://www.scopus.com/inward/record.url?scp=36549100095&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549100095&partnerID=8YFLogxK

U2 - 10.1063/1.95881

DO - 10.1063/1.95881

M3 - Article

VL - 46

SP - 900

EP - 902

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -