Semiconductor laser bifurcations

T. Erneux, A. Gavrielides, V. Kovanis

Research output: Contribution to journalConference articlepeer-review

Abstract

Semiconductor lasers (SL) have a wide range of applications, but a weak optical feedback destabilizes its normal output. The instabilities generate higher intensity or frequency noise which are undesirable for certain applications. Fourier spectra measurements with numerical studies of rate equations show that these instabilities result from successive bifurcations. In this respect, the bifurcations are analyzed using modern asymptotic techniques, taking advantage of the natural parameters of laser equations. The laser subject to injection and the laser subject to an optical feedback are studied using the rate equations for the complex electrical field E and the carrier number N.

Original languageEnglish
Pages (from-to)286-287
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
Publication statusPublished - Dec 1 1996
Externally publishedYes
EventProceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 2 (of 2) - Boston, MA, USA
Duration: Nov 18 1996Nov 21 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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