Semiconductor laser bifurcations

T. Erneux, A. Gavrielides, V. Kovanis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Semiconductor lasers (SL) have a wide range of applications, but a weak optical feedback destabilizes its normal output. The instabilities generate higher intensity or frequency noise which are undesirable for certain applications. Fourier spectra measurements with numerical studies of rate equations show that these instabilities result from successive bifurcations. In this respect, the bifurcations are analyzed using modern asymptotic techniques, taking advantage of the natural parameters of laser equations. The laser subject to injection and the laser subject to an optical feedback are studied using the rate equations for the complex electrical field E and the carrier number N.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Editors Anon
PublisherIEEE
Pages286-287
Number of pages2
Volume2
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 2 (of 2) - Boston, MA, USA
Duration: Nov 18 1996Nov 21 1996

Other

OtherProceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 2 (of 2)
CityBoston, MA, USA
Period11/18/9611/21/96

Fingerprint

Semiconductor lasers
Optical feedback
Lasers

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Erneux, T., Gavrielides, A., & Kovanis, V. (1996). Semiconductor laser bifurcations. In Anon (Ed.), Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 2, pp. 286-287). IEEE.

Semiconductor laser bifurcations. / Erneux, T.; Gavrielides, A.; Kovanis, V.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. ed. / Anon. Vol. 2 IEEE, 1996. p. 286-287.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Erneux, T, Gavrielides, A & Kovanis, V 1996, Semiconductor laser bifurcations. in Anon (ed.), Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. vol. 2, IEEE, pp. 286-287, Proceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 2 (of 2), Boston, MA, USA, 11/18/96.
Erneux T, Gavrielides A, Kovanis V. Semiconductor laser bifurcations. In Anon, editor, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 2. IEEE. 1996. p. 286-287
Erneux, T. ; Gavrielides, A. ; Kovanis, V. / Semiconductor laser bifurcations. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. editor / Anon. Vol. 2 IEEE, 1996. pp. 286-287
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