Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source

W. K. Fong, K. K. Leung, C. Surya

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Liquid Si ditertiarybutyl silane (DTBSi) metal-organic source was used as the Si dopant source for the growth of n-type GaN by metal-organic chemical vapor deposition (MOCVD) for the first time to replace the conventional gaseous Si sources like silane SiH4 [K. Pakula, R. Bozek, J.M. Baranowski, J. Jasinski, Z. Liliental-Weber, J. Crystal Growth 267 (2004) 1] and disilane Si2H6 [L.B. Rowland, K. Doverspike, D.K. Gaskill, Appl. Phys. Lett. 66 (1995) 1495]. Electrical, structural, optical, and surface properties of the samples doped by DTBSi as well as an undoped control sample are determined by Hall, high resolution X-ray diffraction (HRXRD), photoluminescence (PL), and atomic force microscopy (AFM) measurements respectively. A constant doping efficiency for GaN is obtained with carrier concentration up to 1018 cm-3. The typical HRXRD full-width at half-maximum values of symmetric (0 0 2) and asymmetric (1 0 2) planes are 284 and 482 arcsec, respectively. The near band edge PL intensity is found to be increased proportional to the doping concentration. Dark spot density is also determined from AFM measurement.

Original languageEnglish
Pages (from-to)239-242
Number of pages4
JournalJournal of Crystal Growth
Volume298
Issue numberSPEC. ISS
DOIs
Publication statusPublished - Jan 1 2007
Externally publishedYes

Fingerprint

Organic Chemicals
Silanes
Gallium nitride
gallium nitrides
Organic chemicals
silanes
metalorganic chemical vapor deposition
Chemical vapor deposition
Metals
Doping (additives)
Atomic force microscopy
Photoluminescence
atomic force microscopy
metals
photoluminescence
X ray diffraction
high resolution
Crystallization
Full width at half maximum
diffraction

Keywords

  • A1. Doping
  • A3. Metal-organic chemical vapor deposition
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source. / Fong, W. K.; Leung, K. K.; Surya, C.

In: Journal of Crystal Growth, Vol. 298, No. SPEC. ISS, 01.01.2007, p. 239-242.

Research output: Contribution to journalArticle

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AB - Liquid Si ditertiarybutyl silane (DTBSi) metal-organic source was used as the Si dopant source for the growth of n-type GaN by metal-organic chemical vapor deposition (MOCVD) for the first time to replace the conventional gaseous Si sources like silane SiH4 [K. Pakula, R. Bozek, J.M. Baranowski, J. Jasinski, Z. Liliental-Weber, J. Crystal Growth 267 (2004) 1] and disilane Si2H6 [L.B. Rowland, K. Doverspike, D.K. Gaskill, Appl. Phys. Lett. 66 (1995) 1495]. Electrical, structural, optical, and surface properties of the samples doped by DTBSi as well as an undoped control sample are determined by Hall, high resolution X-ray diffraction (HRXRD), photoluminescence (PL), and atomic force microscopy (AFM) measurements respectively. A constant doping efficiency for GaN is obtained with carrier concentration up to 1018 cm-3. The typical HRXRD full-width at half-maximum values of symmetric (0 0 2) and asymmetric (1 0 2) planes are 284 and 482 arcsec, respectively. The near band edge PL intensity is found to be increased proportional to the doping concentration. Dark spot density is also determined from AFM measurement.

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