Si-induced enhancement of ohmic performance of Ti/Al/Mo/Au metallisation for AlGaN/GaN HEMTs

F. M. Mohammed, L. Wang, H. J. Koo, I. Adesida

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Incorporation of Si is shown to induce an improvement in the ohmic performance of Ti/Al/Mo/Au metallisation on MOCVD-grown AlGaN/GaN heterostructures. Optimised contact resistance (Rc) and specific contact resistivity (ρc) of Ti/Si/Al/Si/Mo/Au metallisation are 0.16 Ω · mm and 6.77 × 10-7 Ω · cm2 in comparison to 0.41 Ω · mm and 4.78 × 10-6 Ω · cm2 obtained for Ti/Al/Mo/Au metallisation. Auger electron spectroscopy analysis indicates that Si containing inter-metallics formation is responsible for enhancement of ohmic performance.

Original languageEnglish
Pages (from-to)984-985
Number of pages2
JournalElectronics Letters
Volume41
Issue number17
DOIs
Publication statusPublished - Aug 18 2005

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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