Incorporation of Si is shown to induce an improvement in the ohmic performance of Ti/Al/Mo/Au metallisation on MOCVD-grown AlGaN/GaN heterostructures. Optimised contact resistance (Rc) and specific contact resistivity (ρc) of Ti/Si/Al/Si/Mo/Au metallisation are 0.16 Ω · mm and 6.77 × 10-7 Ω · cm2 in comparison to 0.41 Ω · mm and 4.78 × 10-6 Ω · cm2 obtained for Ti/Al/Mo/Au metallisation. Auger electron spectroscopy analysis indicates that Si containing inter-metallics formation is responsible for enhancement of ohmic performance.
ASJC Scopus subject areas
- Electrical and Electronic Engineering