Si-induced enhancement of ohmic performance of Ti/Al/Mo/Au metallisation for AlGaN/GaN HEMTs

F. M. Mohammed; L. Wang; H. J. Koo; I. Adesida

doi:10.1049/el:20051849

Si-induced enhancement of ohmic performance of Ti/Al/Mo/Au metallisation for AlGaN/GaN HEMTs

F. M. Mohammed, L. Wang, H. J. Koo, I. Adesida

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Incorporation of Si is shown to induce an improvement in the ohmic performance of Ti/Al/Mo/Au metallisation on MOCVD-grown AlGaN/GaN heterostructures. Optimised contact resistance (R_c) and specific contact resistivity (ρ_c) of Ti/Si/Al/Si/Mo/Au metallisation are 0.16 Ω · mm and 6.77 × 10^-7 Ω · cm² in comparison to 0.41 Ω · mm and 4.78 × 10^-6 Ω · cm² obtained for Ti/Al/Mo/Au metallisation. Auger electron spectroscopy analysis indicates that Si containing inter-metallics formation is responsible for enhancement of ohmic performance.

Original language	English
Pages (from-to)	984-985
Number of pages	2
Journal	Electronics Letters
Volume	41
Issue number	17
DOIs	https://doi.org/10.1049/el:20051849
Publication status	Published - Aug 18 2005

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "Si-induced enhancement of ohmic performance of Ti/Al/Mo/Au metallisation for AlGaN/GaN HEMTs",

abstract = "Incorporation of Si is shown to induce an improvement in the ohmic performance of Ti/Al/Mo/Au metallisation on MOCVD-grown AlGaN/GaN heterostructures. Optimised contact resistance (Rc) and specific contact resistivity (ρc) of Ti/Si/Al/Si/Mo/Au metallisation are 0.16 Ω · mm and 6.77 × 10-7 Ω · cm2 in comparison to 0.41 Ω · mm and 4.78 × 10-6 Ω · cm2 obtained for Ti/Al/Mo/Au metallisation. Auger electron spectroscopy analysis indicates that Si containing inter-metallics formation is responsible for enhancement of ohmic performance.",

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year = "2005",

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T1 - Si-induced enhancement of ohmic performance of Ti/Al/Mo/Au metallisation for AlGaN/GaN HEMTs

AU - Mohammed, F. M.

AU - Wang, L.

AU - Koo, H. J.

AU - Adesida, I.

PY - 2005/8/18

Y1 - 2005/8/18

N2 - Incorporation of Si is shown to induce an improvement in the ohmic performance of Ti/Al/Mo/Au metallisation on MOCVD-grown AlGaN/GaN heterostructures. Optimised contact resistance (Rc) and specific contact resistivity (ρc) of Ti/Si/Al/Si/Mo/Au metallisation are 0.16 Ω · mm and 6.77 × 10-7 Ω · cm2 in comparison to 0.41 Ω · mm and 4.78 × 10-6 Ω · cm2 obtained for Ti/Al/Mo/Au metallisation. Auger electron spectroscopy analysis indicates that Si containing inter-metallics formation is responsible for enhancement of ohmic performance.

AB - Incorporation of Si is shown to induce an improvement in the ohmic performance of Ti/Al/Mo/Au metallisation on MOCVD-grown AlGaN/GaN heterostructures. Optimised contact resistance (Rc) and specific contact resistivity (ρc) of Ti/Si/Al/Si/Mo/Au metallisation are 0.16 Ω · mm and 6.77 × 10-7 Ω · cm2 in comparison to 0.41 Ω · mm and 4.78 × 10-6 Ω · cm2 obtained for Ti/Al/Mo/Au metallisation. Auger electron spectroscopy analysis indicates that Si containing inter-metallics formation is responsible for enhancement of ohmic performance.

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Si-induced enhancement of ohmic performance of Ti/Al/Mo/Au metallisation for AlGaN/GaN HEMTs

Abstract

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