Silicon nanowire array architecture for heterojunction electronics

M. M. Solovan; V. V. Brus; A. I. Mostovyi; P. D. Maryanchuk; I. G. Orletskyi; T. T. Kovaliuk; S. L. Abashin

doi:10.1134/S1063782617040200

Silicon nanowire array architecture for heterojunction electronics

M. M. Solovan, V. V. Brus, A. I. Mostovyi, P. D. Maryanchuk, I. G. Orletskyi, T. T. Kovaliuk, S. L. Abashin

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage V_oc = 0.8 V, short-circuit current I_sc = 3.72 mA/cm² and fill factor FF = 0.5 under illumination of 100 mW/cm².

Original language	English
Pages (from-to)	542-548
Number of pages	7
Journal	Semiconductors
Volume	51
Issue number	4
DOIs	https://doi.org/10.1134/S1063782617040200
Publication status	Published - Apr 1 2017
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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title = "Silicon nanowire array architecture for heterojunction electronics",

abstract = "Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage Voc = 0.8 V, short-circuit current Isc = 3.72 mA/cm2 and fill factor FF = 0.5 under illumination of 100 mW/cm2.",

author = "Solovan, {M. M.} and Brus, {V. V.} and Mostovyi, {A. I.} and Maryanchuk, {P. D.} and Orletskyi, {I. G.} and Kovaliuk, {T. T.} and Abashin, {S. L.}",

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T1 - Silicon nanowire array architecture for heterojunction electronics

AU - Solovan, M. M.

AU - Brus, V. V.

AU - Mostovyi, A. I.

AU - Maryanchuk, P. D.

AU - Orletskyi, I. G.

AU - Kovaliuk, T. T.

AU - Abashin, S. L.

PY - 2017/4/1

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N2 - Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage Voc = 0.8 V, short-circuit current Isc = 3.72 mA/cm2 and fill factor FF = 0.5 under illumination of 100 mW/cm2.

AB - Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage Voc = 0.8 V, short-circuit current Isc = 3.72 mA/cm2 and fill factor FF = 0.5 under illumination of 100 mW/cm2.

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Silicon nanowire array architecture for heterojunction electronics

Abstract

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