Silicon nanowire array architecture for heterojunction electronics

M. M. Solovan, V. V. Brus, A. I. Mostovyi, P. D. Maryanchuk, I. G. Orletskyi, T. T. Kovaliuk, S. L. Abashin

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage Voc = 0.8 V, short-circuit current Isc = 3.72 mA/cm2 and fill factor FF = 0.5 under illumination of 100 mW/cm2.

Original languageEnglish
Pages (from-to)542-548
Number of pages7
JournalSemiconductors
Volume51
Issue number4
DOIs
Publication statusPublished - Apr 1 2017
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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