Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach

Ahmad Khusro, Saddam Husain, Mohammad Hashmi, Abdul Qayyum Ansari

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)
Original languageEnglish
Pages (from-to)e22112
JournalInternational Journal of RF and Microwave Computer-Aided Engineering
Volume30
Issue number4
Publication statusPublished - Apr 1 2020

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