Original language | English |
---|---|
Pages (from-to) | e22112 |
Journal | International Journal of RF and Microwave Computer-Aided Engineering |
Volume | 30 |
Issue number | 4 |
Publication status | Published - Apr 1 2020 |
Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach
Ahmad Khusro, Saddam Husain, Mohammad Hashmi, Abdul Qayyum Ansari
Research output: Contribution to journal › Article › peer-review
36
Citations
(Scopus)