Smooth n-type GaN surfaces by photoenhanced wet etching

C. Youtsey, I. Adesida, L. T. Romano, G. Bulman

Research output: Contribution to journalArticle

149 Citations (Scopus)

Abstract

A room-temperature photoelectrochemical wet etching process is described that produces smoothly etched GaN surfaces using KOH solution and Hg arc lamp illumination. Atomic force microscope measurements indicate a root-mean-square etched surface roughness of 1.5 nm, which compares favorably to the unetched surface roughness of approximately 0.3 nm. Etch rates of 50nm/min were obtained using a KOH solution concentration of 0.02 M and an illumination intensity of 40mW/cm2. It is shown that the smooth etching occurs under conditions of low KOH solution concentration and high light intensities, which result in a diffusion-limited etch process.

Original languageEnglish
Pages (from-to)560-562
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number5
DOIs
Publication statusPublished - 1998
Externally publishedYes

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etching
surface roughness
illumination
arc lamps
luminous intensity
microscopes
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Smooth n-type GaN surfaces by photoenhanced wet etching. / Youtsey, C.; Adesida, I.; Romano, L. T.; Bulman, G.

In: Applied Physics Letters, Vol. 72, No. 5, 1998, p. 560-562.

Research output: Contribution to journalArticle

Youtsey, C. ; Adesida, I. ; Romano, L. T. ; Bulman, G. / Smooth n-type GaN surfaces by photoenhanced wet etching. In: Applied Physics Letters. 1998 ; Vol. 72, No. 5. pp. 560-562.
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