Specific features of the optical and electrical properties of polycrystalline CdTe films grown by the thermal evaporation method

V. V. Brus; M. N. Solovan; E. V. Maistruk; I. P. Kozyarskii; P. D. Maryanchuk; K. S. Ulyanytsky; J. Rappich

doi:10.1134/S1063783414100072

Specific features of the optical and electrical properties of polycrystalline CdTe films grown by the thermal evaporation method

V. V. Brus, M. N. Solovan, E. V. Maistruk, I. P. Kozyarskii, P. D. Maryanchuk, K. S. Ulyanytsky, J. Rappich

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

The results of studying the physical properties of thin CdTe films obtained by the thermal evaporation method have been presented. The optical constants and the band gap of the films under study have been determined (E_g = 1.46 eV). It has been established based on the investigation of optical properties and the Raman spectrum of the films that they possess high structural quality. The activation energy of the electrical conductivity of CdTe films has been determined: E_a = 0.039 eV. The measured spectral dependences of the impedance of CdTe thin films are characteristic of the inhomogeneous medium with two time constants: τ_gb = R_gbC_gb = 1/ω_gb = 1.62 × 10⁻³ s and τ_g = R_gC_g = 1/ω_g = 9.1 × 10⁻⁷ s for grain boundaries and grains, respectively.

Original language	English
Pages (from-to)	1947-1951
Number of pages	5
Journal	Physics of the Solid State
Volume	56
Issue number	10
DOIs	https://doi.org/10.1134/S1063783414100072
Publication status	Published - Oct 10 2014
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Specific features of the optical and electrical properties of polycrystalline CdTe films grown by the thermal evaporation method. / Brus, V. V.; Solovan, M. N.; Maistruk, E. V.; Kozyarskii, I. P.; Maryanchuk, P. D.; Ulyanytsky, K. S.; Rappich, J.

In: Physics of the Solid State, Vol. 56, No. 10, 10.10.2014, p. 1947-1951.

Research output: Contribution to journal › Article › peer-review

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abstract = "The results of studying the physical properties of thin CdTe films obtained by the thermal evaporation method have been presented. The optical constants and the band gap of the films under study have been determined (Eg = 1.46 eV). It has been established based on the investigation of optical properties and the Raman spectrum of the films that they possess high structural quality. The activation energy of the electrical conductivity of CdTe films has been determined: Ea = 0.039 eV. The measured spectral dependences of the impedance of CdTe thin films are characteristic of the inhomogeneous medium with two time constants: τgb = RgbCgb = 1/ωgb = 1.62 × 10−3 s and τg = RgCg = 1/ωg = 9.1 × 10−7 s for grain boundaries and grains, respectively.",

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AU - Solovan, M. N.

AU - Maistruk, E. V.

AU - Kozyarskii, I. P.

AU - Maryanchuk, P. D.

AU - Ulyanytsky, K. S.

AU - Rappich, J.

PY - 2014/10/10

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N2 - The results of studying the physical properties of thin CdTe films obtained by the thermal evaporation method have been presented. The optical constants and the band gap of the films under study have been determined (Eg = 1.46 eV). It has been established based on the investigation of optical properties and the Raman spectrum of the films that they possess high structural quality. The activation energy of the electrical conductivity of CdTe films has been determined: Ea = 0.039 eV. The measured spectral dependences of the impedance of CdTe thin films are characteristic of the inhomogeneous medium with two time constants: τgb = RgbCgb = 1/ωgb = 1.62 × 10−3 s and τg = RgCg = 1/ωg = 9.1 × 10−7 s for grain boundaries and grains, respectively.

AB - The results of studying the physical properties of thin CdTe films obtained by the thermal evaporation method have been presented. The optical constants and the band gap of the films under study have been determined (Eg = 1.46 eV). It has been established based on the investigation of optical properties and the Raman spectrum of the films that they possess high structural quality. The activation energy of the electrical conductivity of CdTe films has been determined: Ea = 0.039 eV. The measured spectral dependences of the impedance of CdTe thin films are characteristic of the inhomogeneous medium with two time constants: τgb = RgbCgb = 1/ωgb = 1.62 × 10−3 s and τg = RgCg = 1/ωg = 9.1 × 10−7 s for grain boundaries and grains, respectively.

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Specific features of the optical and electrical properties of polycrystalline CdTe films grown by the thermal evaporation method

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